Large area chemical vapor deposited graphene and hexagonal boron nitride was used to
fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors …

Graphene–insulator–graphene vertical tunneling structures are discussed from a theoretical
perspective. Momentum conservation in such devices leads to highly nonlinear current …

Several proposed beyond-CMOS devices based on two-dimensional (2D) heterostructures
require the deposition of thin dielectrics between 2D layers. However, the direct deposition …

We fabricate and characterize a set of dual-gated graphene field effect transistors using a
novel physical vapor deposition technique in which titanium is evaporated onto the …

Transition metal dichalcogenide (TMD)-based vertical Schottky heterostructures have
recently shown promise as a next generation device for a variety of applications. In order for …

A graphene switching transistor (GST) is proposed based on graphene-hexagonal boron
nitride (hBN)-graphene vertical heterostructure. The carrier transport between source and …

Evaluating graphene quality is crucial for both industrial applications and academic
research. Traditional methods like Optical Microscope, Raman Spectroscope, Scanning and …

Figure 1.1 The relationship between MoS2 band structure and film thickness, showing the
transition from a 1.2 eV indirect bandgap in bulk MoS2 to a 1.9 eV direct bandgap for …

Symmetric graphene tunnelingfield-effect transistors (SymFETs) consisting of two
independently gated graphene layers separated by a potential barrier have been proposed …

A new type of graphene-switching transistor termed as" junctionless tunnel effect transistor
(JTET)" based on graphene-hBN-graphene vertical heterostructure and interlayer tunneling …