S Moon, J Kim, J Park, S Im, J Kim, I Hwang… - Advanced …, 2023 - Wiley Online Library
Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of …
K Liao, P Lei, M Tu, S Luo, T Jiang… - ACS Applied Materials …, 2021 - ACS Publications
A memristor is a two-terminal device with nonvolatile resistive switching (RS) behaviors. Recently, memristors have been highly desirable for both fundamental research and …
Z Cao, B Sun, G Zhou, S Mao, S Zhu, J Zhang… - Nanoscale …, 2023 - pubs.rsc.org
Since the beginning of the 21st century, there is no doubt that the importance of artificial intelligence has been highlighted in many fields, among which the memristor-based artificial …
H Duan, S Cheng, L Qin, X Zhang, B Xie… - The Journal of …, 2022 - ACS Publications
The memristor is an excellent candidate for nonvolatile memory and neuromorphic computing. Recently, two-dimensional (2D) materials have been developed for use in …
Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on …
Owing to their unique features such as thresholding and self‐relaxation behavior diffusive memristors built from volatile electrochemical metallization (v‐ECM) devices are drawing …
AC Khot, TD Dongale, KA Nirmal, JH Sung… - … Applied Materials & …, 2022 - ACS Publications
Although two-dimensional (2D) nanomaterials are promising candidates for use in memory and synaptic devices owing to their unique physical, chemical, and electrical properties, the …
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they …
XD Li, NK Chen, BQ Wang, M Niu, M Xu… - Advanced …, 2024 - Wiley Online Library
The Si‐based integrated circuits industry has been developing for more than half a century, by focusing on the scaling‐down of transistor. However, the miniaturization of transistors will …