The transition from planar (2D) to three-dimensional (3D) arrays represented a turning point
for the phenomenology of random telegraph noise (RTN) in NAND Flash technologies. The …

In this work, the nonvolatile memory constructed on the tunnel thin-film transistors (tunnel-
TFTs) using polycrystalline-silicon channel featuring ferroelectric HfZrOx layer is …

In this article, we report the first experimental investigation of the behavior of the 3-D NAND
Flash memory technology in the deep-cryogenic regime (temperature K). Clear evidence is …

In this work, the ferroelectric thin-film transistor (Fe-TFT) with polycrystalline-silicon (poly-Si)
channel and HfZrO x gate dielectric is fabricated to study the characteristics of non-volatile …

Three-dimensional (3D) NAND flash memory has become quite popular and is now widely
used in data centers and mobile devices due to its outstanding storage density and cost …

Random telegraph noise (RTN) measurements are performed on as-processed,
programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory …

In this paper, we present a detailed experimental investigation of high-temperature data
retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge …

In this paper, we report clear experimental evidence proving that programmed cells in a 3D
NAND Flash memory array may experience an unexpected average increase in their …

A new memory device behavior has been experimentally identified and investigated in 3D
NAND devices. The experimental results show that the memory device characteristics …

In this work, by means of 3D TCAD simulations, we analyze the effects of the trap-induced
percolative conduction in the polysilicon channels of 3D NAND memory cells. We …