The emergence and prospects of deep-ultraviolet light-emitting diode technologies
Abstract By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
to cover almost the entire ultraviolet spectral range (210–400 nm), making ultraviolet light …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Recent advances on gan-based micro-leds
Y Zhang, R Xu, Q Kang, X Zhang, Z Zhang - Micromachines, 2023 - mdpi.com
GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and
distinctive advantages for display, visible-light communication (VLC), and other novel …
distinctive advantages for display, visible-light communication (VLC), and other novel …
progress in high performance III-nitride micro-light-emitting diodes
MS Wong, S Nakamura… - ECS Journal of Solid State …, 2020 - iopscience.iop.org
The developments of high performance InGaN based micro-light-emitting diodes (μLEDs)
are discussed. We first review the early demonstrations of μLEDs and the state-of-the-art …
are discussed. We first review the early demonstrations of μLEDs and the state-of-the-art …
Red InGaN micro-light-emitting diodes (> 620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact
We present efficient red InGaN 60× 60 μm 2 micro-light-emitting diodes (μLEDs) with an
epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor …
epitaxial tunnel junction (TJ) contact. The TJ was grown by metal-organic chemical vapor …
[HTML][HTML] Progress on and challenges of p-type formation for GaN power devices
T Narita, H Yoshida, K Tomita, K Kataoka… - Journal of Applied …, 2020 - pubs.aip.org
The fabrication processes of p-type regions for vertical GaN power devices are investigated.
A p-type body layer in a trench gate metal-oxide-semiconductor field-effect transistor …
A p-type body layer in a trench gate metal-oxide-semiconductor field-effect transistor …
[HTML][HTML] Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …
Hybrid tunnel junction contacts to III–nitride light-emitting diodes
In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–
nitride heterostructures where the active region of the device and the top p-GaN layers were …
nitride heterostructures where the active region of the device and the top p-GaN layers were …
RGB monolithic GaInN-based μLED arrays connected via tunnel junctions
T Saito, N Hasegawa, K Imura, Y Suehiro… - Applied Physics …, 2023 - iopscience.iop.org
We report a 330 ppi monolithic RGB micro light-emitting diodes (μLED) array of blue, green
and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form …
and red GaInN-based LEDs stacked on the same wafer. Considering it is challenging to form …
[HTML][HTML] 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection
Deep ultraviolet (UV) light-emitting diodes (LEDs) at a wavelength of 226 nm based on
AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the …
AlGaN/AlN multiple quantum wells using p-type Si as both the hole supplier and the …