High-gain persistent nonlinear conductivity in high-voltage gallium nitride photoconductive switches

EA Hirsch, A Mar, FJ Zutavern, G Pickrell… - … Modulator and High …, 2018 - ieeexplore.ieee.org
Wide-bandgap GaN optically-controlled switches have the potential for driving down the cost
and size and improving the efficiency and capabilities of high voltage pulsed-power …

A SiC MOSFET power module with integrated gate drive for 2.5 MHz class E resonant converters

AB Jorgensen, UR Nair… - CIPS 2018; 10th …, 2018 - ieeexplore.ieee.org
Industrial processes are still relying on high frequency converters based on vacuum tubes.
Emerging silicon carbide semiconductor devices have potential to replace vacuum tubes …

[HTML][HTML] High-voltage AlGaN/GaN heterojunction lateral photoconductive semiconductor switch based on semi-insulating 4H-SiC substrate

Y Li, L Xiao, C Luan, Y Qin, X Sun, H Sha… - Journal of Applied …, 2024 - pubs.aip.org
A novel high-power AlGaN/GaN heterojunction lateral photoconductive semiconductor
switch (PCSS) based on the SiC substrate is proposed, which achieves high dark-state …

[图书][B] Photoluminescence of Chromium in Gallium Oxide and Aluminum Gallium Oxide Under Pressure

LM Barmore - 2023 - search.proquest.com
Photoluminescence of Chromium in Gallium Oxide and Aluminum Gallium Oxide Under
Pressure Photoluminescence of Chromium in Gallium Oxide and Aluminum Gallium Oxide …

[PDF][PDF] High-Gain Persistent Nonlinear Conductivity in High-Voltage Gallium Nitride Photoconductive Switches.

EA Schrock, A Mar, FJ Zutavern, G Pickrell, J Delhotal… - 2018 - osti.gov
Wide-bandgap GaN optically-controlled switches have the potential for driving down the cost
and size, and improving the efficiency and capabilities of high voltage pulsed-power …