HfO 2-based FeFET is a remarkably promising candidate among emerging memory technologies. Its manifold applications range from nonvolatile memory to neuromorphic …
In a number of machine learning models, an input query is searched across the trained class vectors to find the closest feature class vector in cosine similarity metric. However …
Digital processing-in-memory (PIM) architectures are rapidly emerging to overcome the memory-wall bottleneck by integrating logic within memory elements. Such architectures …
Digital processing-in-memory (PIM) architectures mitigate the memory wall problem by facilitating parallel bitwise operations directly within memory. Recent works have …
Memristor-based crossbars, which can achieve 1-2 orders of magnitude energy efficiency improvement over digital machines, have been introduced to accelerate the neural networks …
Z Wang, Y Liu, J Zhou, G Han - Microelectronics Journal, 2024 - Elsevier
In this study, we proposed a novel multi-bit content addressable memory (MCAM) cell based on one single double-gated ferroelectric-gate FET (DG-FeFET). Baseline DG-FeFET has …
SA Ovy, MAI Romel, Y Xiao, Y Xu, K Ni… - 2024 IEEE Computer …, 2024 - ieeexplore.ieee.org
Ferroelectric FETs (FeFETs) are promising emerging nonvolatile memory devices due to their attractive features such as CMOS compatibility, non-volatility, multi-level cell (MLC) …
The throughput and energy efficiency of compute-centric architectures for memory intensive Deep Neural Networks (DNN) applications are limited by memory bound issues like high …
The demand for high density storage devices are increasing with the surge in data intensive applications. The exploration of multi-level cell (MLC) memories is pivotal due to the …