Uncovering recent progress in nanostructured light-emitters for information and communication technologies
Semiconductor nanostructures with low dimensionality like quantum dots and quantum
dashes are one of the best attractive and heuristic solutions for achieving high performance …
dashes are one of the best attractive and heuristic solutions for achieving high performance …
High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on …
A reliable, efficient and electrically-pumped Si-based laser is considered as the main
challenge to achieve the integration of all key building blocks with silicon photonics. Despite …
challenge to achieve the integration of all key building blocks with silicon photonics. Despite …
Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth
2 µm photonics and optoelectronics is promising for potential applications such as optical
communications, LiDAR, and chemical sensing. While the research on 2 µm detectors is on …
communications, LiDAR, and chemical sensing. While the research on 2 µm detectors is on …
Lasing characteristics and reliability of 1550 nm laser diodes monolithically grown on silicon
Room‐temperature continuous wave (RT‐CW) electrically pumped 1550 nm indium
phosphide (InP)‐based laser diodes are realized on complementary metal‐oxide …
phosphide (InP)‐based laser diodes are realized on complementary metal‐oxide …
Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission
InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising
quantum emitters for next-generation technologies in sensing and communications. In this …
quantum emitters for next-generation technologies in sensing and communications. In this …
Low Dark Current and High Speed InGaAs Photodiode on CMOS-Compatible Silicon by Heteroepitaxy
Top-illuminated proof-of-concept indium gallium arsenide (InGaAs) photodiode (PD) array
and high speed InGaAs PDs were realized on (001) silicon (Si) substrate by direct …
and high speed InGaAs PDs were realized on (001) silicon (Si) substrate by direct …
Semiconductor quantum dot lasers: Genesis, prospects, and challenges
Semiconductor nanostructures based on quantum dots present the most attractive solutions
for achieving high-performance photonic devices. When one or more spatial dimensions of …
for achieving high-performance photonic devices. When one or more spatial dimensions of …
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RJ Chu, Y Kim, SW Woo, WJ Choi, D Jung - 2023 - s-space.snu.ac.kr
InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising
quantum emitters for nextgeneration technologies in sensing and communications. In this …
quantum emitters for nextgeneration technologies in sensing and communications. In this …
Comparison of Noise Characteristics of InAs/InP Quantum Dash and Quantum Well Mode-locked Lasers
This paper presents the comparison of noise properties of an InAs/InP quantum dash
(QDash) and quantum well (QW) mode-locked lasers. By comparing their relative intensity …
(QDash) and quantum well (QW) mode-locked lasers. By comparing their relative intensity …