In the present article, we give a review of modern data and latest achievements pertaining to
the study of electronic properties of oxygen vacancies in hafnium oxide. Hafnium oxide is a …

Back-end-of-line integrated 1*1\mum^2\hboxTiN/HfO_2/\breakTi/TiN MIM memory devices in
a 0.25-μm complementary metal–oxide–semiconductor technology were built to investigate …

Radiation induced charge trapping in ultrathin HfO 2-based n-channel MOSFETs is
characterized as a function of dielectric thickness and irradiation bias following exposure to …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Energy band diagrams for MOS devices are essential for understanding device performance
and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO 2) interfacial layer …

In this study, we demonstrated experimentally and theoretically that oxygen vacancies are
responsible for the charge transport in HfO 2. Basing on the model of phonon-assisted …

The resistive switching properties of Cu-doped-HfO 2-based resistive-random-access-
memory (ReRAM) devices are investigated under proton-based irradiations with different …

The gate leakage current of metal-oxide-semiconductors (MOSs) composed of hafnium
oxide (HfO 2) exhibits temperature dependence, which is usually attributed to the standard …

This work explores the atomic-scale nature of defects within hafnium dioxide/silicon
dioxide/silicon (HfO2/SiO2/Si) transistors generated by hot-carrier stressing. The defects are …

The continuous miniaturization of dynamic random-access memory (DRAM) capacitors has
amplified the demand for electrode materials featuring specific characteristics, such as low …