A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III–V nanowires

KA Dick - Progress in Crystal Growth and Characterization of …, 2008 - Elsevier
Seed particles of elements or compounds which may or may not form alloys are now used
extensively in promoting well-controlled nanowire growth. The technology has evolved …

Local probe techniques for luminescence studies of low-dimensional semiconductor structures

A Gustafsson, ME Pistol, L Montelius… - Journal of Applied …, 1998 - pubs.aip.org
With the rapid development of technologies for the fabrication of, as well as applications of
low-dimensional structures, the demands on characterization techniques increase. Spatial …

Mechanisms of self-ordering of quantum nanostructures grown on nonplanar surfaces

G Biasiol, E Kapon - Physical review letters, 1998 - APS
We present an analytic model that explains the self-ordering of quantum nanostructures
grown on nonplanar surfaces. Self-limiting growth in these structures results from the …

Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures

G Biasiol, A Gustafsson, K Leifer, E Kapon - Physical Review B, 2002 - APS
We have developed an analytic model that describes in detail the establishment of self-
ordered profiles during semiconductor epitaxy on corrugated surfaces. Lateral, self-ordered …

Quantum-size effects on radiative lifetimes and relaxation of excitons in semiconductor nanostructures

J Bellessa, V Voliotis, R Grousson, XL Wang, M Ogura… - Physical Review B, 1998 - APS
A systematic study of exciton dynamics is presented in quantum boxes formed naturally
along the axis of a V-shaped quantum wire, by means of time and spatially resolved …

Effect of lateral confinement on valence-band mixing and polarization anisotropy in quantum wires

F Vouilloz, DY Oberli, MA Dupertuis, A Gustafsson… - Physical Review B, 1998 - APS
The optical properties of high-quality V-groove GaAs/Al x Ga 1− x As quantum wires have
been investigated using low-temperature photoluminescence (PL) and photoluminescence …

Polarization anisotropy and valence band mixing in semiconductor quantum wires

F Vouilloz, DY Oberli, MA Dupertuis, A Gustafsson… - Physical review …, 1997 - APS
We have studied the effect of valence band mixing on the optical properties of
semiconductor quantum wires by analyzing the luminescence polarization. Large …

Self-limiting growth of quantum dot heterostructures on nonplanar substrates

A Hartmann, L Loubies, F Reinhardt… - Applied Physics Letters, 1997 - pubs.aip.org
We study the evolution of AlGaAs/GaAs growth during organometallic chemical vapor
deposition on pyramidal recess patterns etched into GaAs {111} B substrates. Cross …

Epitaxial growth and optical properties of semiconductor quantum wires

XL Wang, V Voliotis - Journal of applied physics, 2006 - pubs.aip.org
In this paper we present a review on major advances achieved over the past ten years in the
field of fabrication of semiconductor quantum wires (QWRs) using epitaxial growth …

Coulomb correlation and band gap renormalization at high carrier densities in quantum wires

R Ambigapathy, I Bar-Joseph, DY Oberli, S Haacke… - Physical review …, 1997 - APS
We have studied the luminescence of narrow quantum wires at photoexcitation densities of
up to∼ 3× 10 6 cm− 1. We show that even at these densities, which are well above the …