With the rapid development of technologies for the fabrication of, as well as applications of low-dimensional structures, the demands on characterization techniques increase. Spatial …
G Biasiol, E Kapon - Physical review letters, 1998 - APS
We present an analytic model that explains the self-ordering of quantum nanostructures grown on nonplanar surfaces. Self-limiting growth in these structures results from the …
We have developed an analytic model that describes in detail the establishment of self- ordered profiles during semiconductor epitaxy on corrugated surfaces. Lateral, self-ordered …
J Bellessa, V Voliotis, R Grousson, XL Wang, M Ogura… - Physical Review B, 1998 - APS
A systematic study of exciton dynamics is presented in quantum boxes formed naturally along the axis of a V-shaped quantum wire, by means of time and spatially resolved …
The optical properties of high-quality V-groove GaAs/Al x Ga 1− x As quantum wires have been investigated using low-temperature photoluminescence (PL) and photoluminescence …
We have studied the effect of valence band mixing on the optical properties of semiconductor quantum wires by analyzing the luminescence polarization. Large …
A Hartmann, L Loubies, F Reinhardt… - Applied Physics Letters, 1997 - pubs.aip.org
We study the evolution of AlGaAs/GaAs growth during organometallic chemical vapor deposition on pyramidal recess patterns etched into GaAs {111} B substrates. Cross …
XL Wang, V Voliotis - Journal of applied physics, 2006 - pubs.aip.org
In this paper we present a review on major advances achieved over the past ten years in the field of fabrication of semiconductor quantum wires (QWRs) using epitaxial growth …
R Ambigapathy, I Bar-Joseph, DY Oberli, S Haacke… - Physical review …, 1997 - APS
We have studied the luminescence of narrow quantum wires at photoexcitation densities of up to∼ 3× 10 6 cm− 1. We show that even at these densities, which are well above the …