Extreme ultraviolet lithography (EUVL) was thoroughly reviewed over a broad range of
topics, including history, tools, source, metrology, condenser and projection optics, resists …

The primary requirement for the development of tools for extreme ultraviolet lithography
(EUVL) has been the identification and optimization of suitable sources. These sources must …

Xe laser-produced plasma with a gas-jet target is considered a promising λ= 11.2-nm
radiation source for a possible extension of the EUV (Extreme UltraViolet) lithography. EUV …

An examination of the influence of target composition and viewing angle on the extreme
ultraviolet spectra of laser produced plasmas formed from tin and tin doped planar targets is …

Extreme-ultraviolet spectra of xenon ions have been recorded in the 4.5 to 20 nm
wavelength region using an electron beam ion trap and a flat field spectrometer. The …

The continuation of Moore's law for semiconductor fabrication envisages the introduction of
extreme ultraviolet lithography (EUVL) based on a source wavelength of 13.5 nm for high …

In this paper, experiments on measuring absorption of infrared laser radiation in the laser-
produced plasma of Xe are described. An absorbed fraction of up to 65% was obtained …

Absolute photoionization cross-section measurements for a mixture of ground and
metastable states of Xe 4+, Xe 5+, and Xe 6+ are reported in the photon energy range of 4 …

Abstract We simulated Extreme Ultra-Violet (EUV) emission from laser-produced tin plasmas
for the lithography of semi-conductor, using one-and two-dimensional radiation …

We describe a novel technique to determine absolute nuclear radii of high-Z nuclides.
Utilizing accurate theoretical atomic structure calculations together with precise …