An inconsistency between commonly used values of the silicon intrinsic carrier
concentration, the effective densities of states in the conduction and valence bands, and the …

This article is a review of recent progress in our understanding of the optical properties of the
important polytypes of SiC: 3C, 4H, 6H, and 15R. We focus on experimental work but also …

We investigated the formation dynamics of excitons and electron-hole (eh) droplets (EHDs)
in Si by using broadband terahertz time-domain spectroscopy. The formation of indirect …

By monitoring changes in excitonic photoluminescence that are induced by far-infrared (FIR)
radiation, we observed resonant FIR absorption by magnetoexcitons in GaAs/AlGaAs …

The free exciton binding energy is a key parameter in silicon material and device physics. In
particular, it provides the necessary link between the energy threshold for valence to …

We use terahertz pulses to induce resonant transitions between the eigenstates of optically
generated exciton populations in a high-quality semiconductor quantum well sample …

We investigated the photoexcited carrier dynamics in Si by using optical pump and terahertz
probe spectroscopy in an energy range between 2 and 25 meV. The formation dynamics of …

Owing to its hexagonal symmetry, indirect band gap, and relatively large unit cell, the
electronic band structure of 4 H-SiC is comprised of a complicated series of anisotropic …

This contribution addresses both the general mid-infrared (MIR) properties of Cu 2 O and
induced absorption due to intraexcitonic 1 s→ 2 p transitions under simultaneous cw laser …

Excitons are the elementary excitations of the electronic system of a semiconductor and,
hence, fundamental quasi-particles in solid state theory. Consisting of a negatively charged …