Monte Carlo modelling of noise in advanced III–V HEMTs
One of the main objectives of modern Microelectronics is the fabrication of devices with
increased cutoff frequency and decreased level of noise. At this moment, the best devices for …
increased cutoff frequency and decreased level of noise. At this moment, the best devices for …
Study on leakage current mechanism and band offset of high-k/n-InAlAs metal-oxide-semiconductor capacitors with HfO2 and HfAlO dielectric
H Guan, H Lv - Thin Solid Films, 2018 - Elsevier
To reduce the leakage current of InAs/AlSb HEMTs, deposition of a high-k dielectric is
required between the InAlAs protection layer and the gate electrode to form a metal-oxide …
required between the InAlAs protection layer and the gate electrode to form a metal-oxide …
[图书][B] Silicon doping profile measurement using terahertz time domain spectroscopy
CY Jen - 2014 - search.proquest.com
Doping profiles in silicon greatly determine electrical performances of microelectronic
devices and are frequently engineered to manipulate device properties. To support …
devices and are frequently engineered to manipulate device properties. To support …
Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors
H Guan, H Lv, H Guo, Y Zhang - Journal of Applied Physics, 2015 - pubs.aip.org
Impact ionization affects the radio-frequency (RF) behavior of high-electron-mobility
transistors (HEMTs), which have narrow-bandgap semiconductor channels, and this …
transistors (HEMTs), which have narrow-bandgap semiconductor channels, and this …
An optimized fitting function with least square approximation in InAs/AlSb HFET small-signal model for characterizing the frequency dependency of impact ionization …
H Guan, H Guo - Chinese Physics B, 2017 - iopscience.iop.org
An enhanced small-signal model is introduced to model the influence of the impact
ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function …
ionization effect on the performance of InAs/AlSb HFET, in which an optimized fitting function …
Improved modeling on the RF behavior of InAs/AlSb HEMTs
H Guan, H Lv, Y Zhang, Y Zhang - Solid-State Electronics, 2015 - Elsevier
The leakage current and the impact ionization effect causes a drawback for the performance
of InAs/AlSb HEMTs due to the InAs channel with a very narrow band gap of 0.35 eV. In this …
of InAs/AlSb HEMTs due to the InAs channel with a very narrow band gap of 0.35 eV. In this …
Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)
MS Begum, J Vijayashree… - 2017 Devices for …, 2017 - ieeexplore.ieee.org
Investigation of performance of InAsSb based High Electron Mobility transistors (HEMTs) Page
1 978-1-5090-4724-6/17/$31.00 ©2017 IEEE Abstract— - In this paper the, Antimonide-based …
1 978-1-5090-4724-6/17/$31.00 ©2017 IEEE Abstract— - In this paper the, Antimonide-based …
Analysis of noise performance in InAs DG-MOSHEMT
S Tamilselvi, S Tamilarasi… - 2017 Devices for …, 2017 - ieeexplore.ieee.org
In this paper the noise performance of double gate (DG) InAs MOS-HEMT with AI2O3
dielectric has been studied. In semiconductor devices noise occurs at near or critical …
dielectric has been studied. In semiconductor devices noise occurs at near or critical …
Carrier dynamics probed by noise in high-frequency electronic devices
T González - 2015 International Conference on Noise and …, 2015 - ieeexplore.ieee.org
Electronic noise, despite being a limiting factor in many applications of semiconductor
devices and integrated circuits, constitutes also a source of information about the …
devices and integrated circuits, constitutes also a source of information about the …
Carrier Dynamics Probed by Noise in High-Frequency Electronic Devices
T González Sánchez - 2015 - gredos.usal.es
Electronic noise, despite being a limiting factor in many applications of semiconductor
devices and integrated circuits, constitutes also a source of information about the …
devices and integrated circuits, constitutes also a source of information about the …