Semiconductor structures used for fundamental or device applications most often
incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or …

Non-volatile memories based on the flash architecture with self-assembled III–V quantum
dots (SAQDs) used as a floating gate are one of the prospective directions for universal …

Light emitters based on the semiconductor alloy aluminum gallium nitride [(Al, Ga) N] have
gained significant attention in recent years due to their potential for a wide range of …

In the past years, light-emitting diodes (LED) made of GaN and its related ternary
compounds with indium and aluminium have become an enabling technology in all areas of …

Statistical fluctuations in the alloy composition on the atomic scale can have important
effects on electronic and optical properties of bulk materials and devices. In particular …

The eight-band k· p formalism has been successfully applied to compute the electronic
properties of a wide range of semiconductor nanostructures in the past and can be …

Micro-LEDs can work under an extremely high injection level and are widely used in high-
brightness micro-displays and visible light communication. With the increase of carrier …

Herein, the use of cathodoluminescence (CL) hyperspectral mapping in the quantification of
the AlGaN alloy composition in graded buffer structures is explored. The quantification takes …

Abstract A nonplanar a-plane (11–20) and c-plane (0001) InGaN/GaN multiple quantum
wells (MQWs) structures were grown an r-plane (1–102) and a c-plane (0001) sapphire (Al 2 …

In this paper, we study the internal quantum efficiency and lasing threshold of AlGaN/GaN
separate confinement heterostructures designed for ultraviolet laser emission. We discuss …