Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development

J Sheng, JH Lee, WH Choi, TH Hong, MJ Kim… - Journal of Vacuum …, 2018 - pubs.aip.org
This article is a review of recent research and development advances in oxide thin film
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …

[HTML][HTML] Atomic layer deposition of doped ZnO films

Z Gao, P Banerjee - Journal of Vacuum Science & Technology A, 2019 - pubs.aip.org
This article reviews the process-structure-property relationship in doped ZnO thin films via
atomic layer deposition (ALD). ALD is an important manufacturing-scalable, layer-by-layer …

Triple-stack ZnO/AlZnO/YZnO heterojunction oxide thin-film transistors by spray pyrolysis for high mobility and excellent stability

JK Saha, MM Billah, J Jang - ACS applied materials & interfaces, 2021 - ACS Publications
We demonstrate a high mobility, triple-stack ZnO/AlZnO/YZnO heterojunction thin-film
transistor (TFT) using the semiconductors deposited by spray pyrolysis at 350° C on an …

Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory …

AR Choi, DH Lim, SY Shin, HJ Kang, D Kim… - Chemistry of …, 2024 - ACS Publications
Dynamic random-access memory (DRAM) devices are essential volatile memory
components in most digital devices. With the increasing demand for further low-power and …

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

MH Cho, CH Choi, JK Jeong - Journal of the Society for …, 2022 - Wiley Online Library
This paper reviews recent developments in the fabrication of high‐performance n‐channel
metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are …

[HTML][HTML] Influence of heavy Hf doping in CeO2: prediction on various physical properties

KM Hossain, SK Mitro, SA Moon, MM Ali, S Chandra… - Results in Physics, 2022 - Elsevier
This work employs density functional theory for calculating the structural, mechanical,
anisotropic, thermal, electronic, and optical properties of Ce 1-x Hf x O 2 (x= 0, 0.25, 0.5, and …

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors

JH Park, HJ Seok, CH Kim, SH Jung… - Advanced Electronic …, 2021 - Wiley Online Library
The Hf‐doped indium zinc tin oxide (Hf: InZnSnO) channel for high performance and stable
transparent thin film transistors (TFTs) is developed by using a simultaneous cosputtering of …

Analyzing acceptor-like state distribution of solution-Processed indium-zinc-oxide semiconductor depending on the in concentration

D Kim, H Lee, Y Yun, J Park, X Zhang, JH Bae… - Nanomaterials, 2023 - mdpi.com
Understanding the density of state (DOS) distribution in solution-processed indium-zinc-
oxide (IZO) thin-film transistors (TFTs) is crucial for addressing electrical instability. This …

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films

J Felizco, T Juntunen, M Uenuma, J Etula… - … Applied Materials & …, 2020 - ACS Publications
Herein, enhancements in thermoelectric (TE) performance, both the power factor (PF) and
thermal stability, are exhibited by sandwiching HfO2 and TiO2 layers onto atomic layer …

Solution-processed yttrium-doped IZTO semiconductors for high-stability thin film transistor applications

Y Zhang, H Zhang, J Yang, X Ding… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
In this article, solution-processed zinc-tin-oxide (ZTO), indium-zinc-tin-oxide (IZTO), and
yttrium-doped indium-zinc-tin-oxide (IZTO: Y) thin film transistors (TFTs) were investigated …