GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

This article discusses the key challenges and the recent breakthroughs in realizing high-
quality indium (In)-rich indium gallium nitride (InGaN) epilayers and InGaN/GaN multiple …

This paper focuses on the determination of the bandgap energy bowing parameter of
strained and relaxed InxGa_1− xN layers. Samples are grown by metal organic vapor phase …

Based on density functional theory, the electronic structures, formation energy and transition
energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show …

In recent years, visible light communication (VLC) technology has attracted intensive
attention due to its huge potential in superior processing ability and fast data transmission …

Magnetism and self-doping induced by adsorbing superhalogens in g-GaN are expected to
be applied in the field of spintronics and electronics. The adsorption, electronic, and …

Cross-sectional transmission electron microscopy studies often reveal a-type dislocations
located either below or above the interfaces in InGaN/GaN structures deposited along the …

InGaN/GaN heterostructures were grown on c-plane sapphire substrates using metal
organic chemical vapour deposition by varying the trimethylindium flow rate as 7, 10 and 14 …

We investigate the photovoltaic performance of pseudomorphic In 0.1 Ga 0.9 N/GaN multiple-
quantum well (MQW) solar cells as a function of the total active region thickness. An …

We propose a new and simple analytical model taking into account of the polarization
charge effects in order to assess the performance of InGaN-based PIN solar cells. The main …