(57) ABSTRACT A low k dielectric layer is formed by depositing an unset dielectric layer on
a Substrate, the dielectric layer including Silicon, Carbon and Oxygen. The surface of the …

In-situ melting and crystallization of sealed cooper wires can be performed by means of
laser annealing for a duration of nanoseconds. The intensity of the laser irradiation is …

BACKGROUND The present disclosure relates to a metal interconnect struc ture, and
particularly to a metal interconnect structure that includes an integrated line and via structure …

A damascene interconnect structure with a bi-layer capping film is provided. The damascene
interconnect structure comprises a semiconductor layer and a dielectric layer disposed on …

BACKGROUND Semiconductor processing involves a number of different chemical and
physical steps whereby minute electronic devices are created on a substrate at the front end …

The present invention generally relates to the field of fab ricating microstructures, such as
integrated circuits, and, more particularly, to the deposition of silicon nitride layers by …

BACKGROUND The present disclosure relates to a metal interconnect struc ture, and
particularly to a metal interconnect structure that includes an integrated line and via structure …

6,211,061 B1 4/2001 Chen et al. 6,218,732 B1 4/2001 Russell et al. 6,225,210 B1 5/2001
Ngo et al. 6,235,633 B1 5/2001 Jang 6,261,951 B1 7/2001 Buchwalter et al. 6,265,779 B1 …

An interconnect structure in which the adhesion between an upper level low-k dielectric
material, such as a material comprising elements of Si, C, O, and H, and an underlying …

(57) ABSTRACT A method of forming a multi-layer stack over a low-k dielectric layer is
disclosed, wherein the multi-layer stack provides an improved anti-reflective effect and an …