Integrated multilayered on-chip inductors for compact CMOS RFICs and their use in a miniature distributed low-noise-amplifier design for ultra-wideband applications
A novel multilayered vertically integrated inductor structure is developed for miniature CMOS
RF integrated circuits, and its properties are investigated. The effect of mutual inductance …
RF integrated circuits, and its properties are investigated. The effect of mutual inductance …
Design of an ultra-small distributed low-noise-amplifier for ultra-wideband applications
A ultra-small distributed low noise amplifier was developed in a standard JAZZ 0.18-μm
RF/mixed signal CMOS process. The 3-stage distributed amplifier occupies just 288× 291 …
RF/mixed signal CMOS process. The 3-stage distributed amplifier occupies just 288× 291 …
Analysis and design of low‐power and high‐gain complementary metal oxide semi‐conductor low noise amplifier operating at 28 GHz frequency for millimeter wave …
K Suganthi, S Malarvizhi - Transactions on Emerging …, 2020 - Wiley Online Library
Low‐noise amplifier supports broadband standards with the advantage of low‐power, high‐
gain, and low noise figure (NF). The low‐frequency design of this low‐noise amplifier (LNA) …
gain, and low noise figure (NF). The low‐frequency design of this low‐noise amplifier (LNA) …
Design of a Radiofrequency Front-End module for “Smart Dust” sensor network
JY Hasani - 2008 - theses.hal.science
This thesis is an attempt toward design of Ka band RF transceiver for wireless sensor
networks (WSN), for which power consumption, cost and size are critical parameters. In …
networks (WSN), for which power consumption, cost and size are critical parameters. In …
[图书][B] Passive and active circuits in CMOS technology for RF, microwave and millimeter wave applications
MK Chirala - 2007 - search.proquest.com
The permeation of CMOS technology to radio frequencies and beyond has fuelled an urgent
need for a diverse array of passive and active circuits that address the challenges of rapidly …
need for a diverse array of passive and active circuits that address the challenges of rapidly …
Design of a 19–22GHz wideband LNA in 0.13 µm CMOS technology using transmission lines
F Zafar, S Arshad, Q Wahab - 2011 IEEE 14th International …, 2011 - ieeexplore.ieee.org
This work presents the design of an inductorless 19-22GHz wideband Low Noise Amplifier
in 0.13 μm CMOS technology from IBM. A single ended three stage configuration is used …
in 0.13 μm CMOS technology from IBM. A single ended three stage configuration is used …
[PDF][PDF] Transceiver Design
V Chapter - eclass.duth.gr
In this chapter we will explain the available transceiver architectures and will discus their
specification, to find the best architecture to be used in wireless sensor network (WSN) …
specification, to find the best architecture to be used in wireless sensor network (WSN) …
[PDF][PDF] Passive Elements Modeling and Design
CIII Chapter III - theses.hal.science
Modeling of three dimensional passive elements and parasitic effects in back-end-process
layers of technology is an important issue in mm-wave design. This issue consists of …
layers of technology is an important issue in mm-wave design. This issue consists of …