Area-selective deposition (ASD) of polymers is expected to be useful for self-aligned
patterning of nucleation inhibitors, sacrificial layers, and air-gap materials during future …

Small-molecule inhibitors are promising for achieving area-selective atomic layer deposition
(ALD) due to their excellent compatibility with industrial processes. In this work, we report on …

During TiO 2 atomic layer deposition (ALD) using TiCl 4 and H 2 O at∼ 150 C, nucleation
proceeds rapidly on hydroxylated SiO 2 but is inherently delayed on passivated surfaces …

Extreme ultraviolet (EUV) lithography is a critical enabler in next-generation technology,
although the low etch resistance of conventional organic EUV resists results in low …

Area-selective ALD of Ir, Ru, and Rh with excellent substrate selectivity was achieved by
using metal β-diketonates, ie, Ir (acac) 3, Ru (thd) 3, and Rh (acac) 3, as precursors with …

Area‐selective deposition (ASD) is a promising bottom‐up approach for fabricating
nanoelectronic devices. However, a challenge is to prevent the undesired growth of …

Small-molecule inhibitors have recently been introduced for passivation during area-
selective deposition (ASD). Small silanes like (N, N-dimethylamino) trimethylsilane …

Area-selective atomic layer deposition (AS-ALD) is a bottom-up materials synthesis process
that provides the opportunity to overcome challenges associated with current top-down …

As critical dimensions in integrated circuits continue to shrink, the lithography-based
alignment of adjacent patterned layers becomes more challenging. Area-selective atomic …

Area selective deposition (ASD) of ruthenium offers a promising approach to fabricate
ultrathin, continuous, and low-resistivity films for metallic interconnection in various …