A comprehensive review of ZnO materials and devices

Ü Özgür, YI Alivov, C Liu, A Teke… - Journal of applied …, 2005 - pubs.aip.org
The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

The chemistry and physics of zinc oxide surfaces

C Wöll - Progress in surface science, 2007 - Elsevier
Metal oxides are virtually everywhere–only gold has the property not to form an oxide on its
surface when exposed to the ambient. As a result, understanding the physics and chemistry …

Density-functional study of the structure and stability of ZnO surfaces

B Meyer, D Marx - Physical Review B, 2003 - APS
An extensive theoretical investigation of the nonpolar (101 0) and (112 0) surfaces as well
as the polar zinc-terminated (0001)-Zn and oxygen-terminated (0001)-O surfaces of ZnO is …

Gas sensing applications of 1D-nanostructured zinc oxide: Insights from density functional theory calculations

MJS Spencer - Progress in Materials Science, 2012 - Elsevier
Gas sensor devices have traditionally comprised thin films of metal oxides, with tin oxide,
zinc oxide and indium oxide being some of the most common materials employed. With the …

Angle-resolved photoemission from polar and nonpolar zinc oxide surfaces

W Göpel, J Pollmann, I Ivanov, B Reihl - Physical Review B, 1982 - APS
We report the first angle-resolved photoemission spectra (ARPES) of polar and nonpolar
surfaces of an ionic wurtzite-type compound semiconductor. We present experimental …

Electronic structure of ideal and relaxed surfaces of ZnO: A prototype ionic wurtzite semiconductor and its surface properties

I Ivanov, J Pollmann - Physical Review B, 1981 - APS
We report the results of a detailed theoretical investigation of electronic properties of
unrelaxed and relaxed ZnO surfaces. The surface electronic structure is evaluated using the …

Calculation of low-energy-electron-diffraction intensities from ). II. Influence of calculational procedure, model potential, and second-layer structural distortions

CB Duke, RJ Meyer, A Paton, P Mark - Physical Review B, 1978 - APS
Dynamical calculations of the intensities of normally-incident low-energy electrons diffracted
from ZnO (10 1 0), performed using an" exact" matrix-inversion method, are compared both …

Self-consistent electronic-structure calculations of the (101 0) surfaces of the wurtzite compounds ZnO and CdS

P Schröer, P Krüger, J Pollmann - Physical Review B, 1994 - APS
We report ab initio calculations of the surface electronic structure of the hexagonal wurtzite
semiconductors ZnO and CdS. The calculations are carried out self-consistently in the local …

Semiconductor surface structures

A Kahn - Surface science reports, 1983 - Elsevier
In this article, we indicate the status of our current understanding of semiconductor surface
geometries. We review the various experimental and theoretical structure determination …

Electronic and structural properties of the (1010) and (1120) ZnO surfaces

NL Marana, VM Longo, E Longo… - The Journal of …, 2008 - ACS Publications
The structural and electronic properties of ZnO (101̅0) and (112̅0) surfaces were
investigated by means of density functional theory applied to periodic calculations at B3LYP …