Radiation-tolerant digitally controlled ring oscillator in 65-nm CMOS

S Biereigel, S Kulis, P Leroux… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This article presents a radiation-tolerant digitally controlled complementary metal–oxide–
semiconductor (CMOS) ring oscillator design suitable for all-digital phase-locked loop …

Radiation-tolerant all-digital PLL/CDR with varactorless LC DCO in 65 nm CMOS

S Biereigel, S Kulis, P Moreira, A Kölpin, P Leroux… - Electronics, 2021 - mdpi.com
This paper presents the first fully integrated radiation-tolerant All-Digital Phase-Locked Loop
(PLL) and Clock and Data Recovery (CDR) circuit for wireline communication applications …

Source switched charge-pump PLLs for high-dose radiation environments

J Prinzie, S Biereigel, S Kulis, P Leitao… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article presents a radiation tolerant charge-pump phase-locked loop (PLL) with low
static phase error variability suitable for high-performance clock systems in high-dose …

A low noise fault tolerant radiation hardened 2.56 Gbps clock-data recovery circuit with high speed feed forward correction in 65 nm CMOS

S Biereigel, S Kulis, P Leitao… - … on Circuits and …, 2019 - ieeexplore.ieee.org
A fault tolerant, radiation hardened Clock and Data Recovery (CDR) architecture is
presented for high-energy physics and space applications. The CDR employs a novel soft …

Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses

G Borghello - 2019 - air.uniud.it
This thesis studies the effects of radiation in nanoscale CMOS technologies exposed to ultra-
high total ionizing doses (TID), up to 1 Grad (SiO2). These extreme radiation levels are …

A SET-tolerant high-frequency multibiased multiphase voltage-controlled oscillator for phase interpolator-based clock and data recovery

Y Hengzhou, S Hao, L Bin, C Jianjun… - … on Nuclear Science, 2022 - ieeexplore.ieee.org
A high-frequency multibiased multiphase voltage-controlled oscillator (MBM-VCO) for clock
and data recovery is proposed. The operating frequency of the voltage-controlled oscillator …

TID effect of MOSFETs in SOI BCD process and its hardening technique

S Wang, X Li, X Cai, D Li, M Jin, P Lu… - … on Nuclear Science, 2023 - ieeexplore.ieee.org
The total ionizing dose (TID) effect of low operation voltage MOSFET (LV-MOS), medium
operation voltage lateral double-diffused metal–oxide–semiconductor field-effect transistor …

Total ionizing dose effect modeling method for CMOS digital-integrated circuit

B Liang, JH Liu, XP Zhang, G Liu, WD Tan… - Nuclear Science and …, 2024 - Springer
Simulating the total ionizing dose (TID) of an electrical system using transistor-level models
can be difficult and expensive, particularly for digital-integrated circuits (ICs). In this study, a …

[PDF][PDF] Radiation-tolerant all-digital clock generators for high energy physics

S Biereigel - 2022 - opus4.kobv.de
The main focus of the presented research is the development and experimental study of
radiation-tolerant clock generation circuits intended for applications in high energy physics …

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

G Termo, G Borghello, F Faccio, S Michelis… - Journal of …, 2023 - iopscience.iop.org
The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies
used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring …