Vertical β-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer
In this work, we demonstrate the high performance of β-Ga 2 O 3 metal–insulator–
semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on …
semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on …
Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric
In this Letter, low-temperature (400 C) chemical vapor deposition-grown boron nitride (BN)
was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high …
was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high …
β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances
During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as
an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a …
an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such as a …
Effect of Hydrogen Annealing on Performances of BN-Based RRAM
BN-based resistive random-access memory (RRAM) has emerged as a potential candidate
for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity …
for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity …
Reduced Trap State Density in AlGaN/GaN HEMTs with Low-Temperature CVD-Grown BN Gate Dielectric
In this letter, low-temperature (400℃) chemical vapor deposition (CVD)-grown boron nitride
(BN) was investigated as the gate dielectric for AlGaN/GaN metal-insulator-semiconductor …
(BN) was investigated as the gate dielectric for AlGaN/GaN metal-insulator-semiconductor …