Resistive random access memory (RRAM) devices are receiving increasing extensive
attention due to their enhanced properties such as fast operation speed, simple device …

With the rapid development of information technique in the big‐data era, there is an
extremely urgent demand for new circuit building blocks, represented by resistive switching …

Serving as neuromorphic hardware accelerators, memristors play a crucial role in large-
scale neuromorphic computing. Herein, two-terminal memristors utilizing amorphous indium …

Abstract We fabricate the Ag/TaO x/TiN device and confirm the structure of the element with
transmission electron microscopy (TEM) and energy dispersive spectroscopy line scan …

The Al/HfO x/AlO y/indium tin oxide (ITO)/polyethylene terephthalate (PET) flexible resistive
random access memory (ReRAM) device was fabricated at room temperature to study the …

Material composition plays a crucial role in the device performance; thus, nonvolatile
memory devices from a small molecule named 5-mercapto-1-methyl tetrazole (MMT) in an …

With the rapid development of emerging artificial intelligence technology, brain–computer
interfaces are gradually moving from science fiction to reality, which has broad application …

The ever-increasing power consumption in integrated circuits has raised concerns about the
relentless doubling of transistor density in chips and cost drop per combinational/sequential …

A solution processed Ag-ion-exchanged Li5AlO4 thin film has been used to fabricate a high
performance oxide memristor device with enhanced bistable switching and memory …

Organic-inorganic halide perovskites (OHPs) with good ion diffusion paths are effective
functional materials for simulating biological neurons. In this work, we utilize the Ag diffusion …