An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools

Q Huang, J Jiang - Progress in Nuclear Energy, 2019 - Elsevier
New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …

[PDF][PDF] 内辐射带质子和电子被动屏蔽

蔡毓龙, 崔帅, 刘洋, 张冬冬, 陆宇历, 张勇 - 核技术, 2023 - researching.cn
摘要高能量/高通量的质子和电子环境对穿越地球内辐射带的椭圆轨道卫星造成超高剂量的累积
辐射效应. 代替传统单质铝屏蔽防护措施, 提出一种用于屏蔽空间质子和电子的复合材料屏蔽 …

Radiation protection of W–Al composite films/coatings for aviation using genetic algorithms

S Chen, L Yang, J Shen - Journal of Physics and Chemistry of Solids, 2025 - Elsevier
This study evaluated electron shielding capabilities of various materials using Geant4 Monte
Carlo software. By analyzing materials with different atomic numbers, we designed and …

Characterization of a Fault-Tolerant RISC-V System-on-Chip for Space Environments

DA Santos, AMP Mattos, DR Melo… - 2023 IEEE International …, 2023 - ieeexplore.ieee.org
Processing units are sensitive to the harsh radiation conditions present in space
applications. Thus, radiation testing is a mandatory step toward high reliability for these …

The Octagonal-Cross-By-Pass-Mesh Topology Design for the On-Chip-Communication

UA Gulzari, W Farooq, SNM Shah, IA Khan, S Anjum… - Computer Networks, 2024 - Elsevier
This article presents the novel Octagonal-Cross-By-Pass-Mesh (Octa-CBP-Mesh) network
topology design for on-chip communication. We have recently presented the cross-by-pass …

[HTML][HTML] Radiation tolerance of the PNI RM3100 magnetometer for a Europa lander mission

LH Regoli, MB Moldwin, C Raines… - … , Methods and Data …, 2020 - gi.copernicus.org
The results of two radiation test campaigns on a low-cost commercial off-the-shelf
magnetometer are presented. The test setup and the total ionization dose (TID) levels …

3D numerical simulation of a Z gate layout MOSFET for radiation tolerance

Y Wang, C Shan, W Piao, X Li, J Yang, F Cao, C Yu - Micromachines, 2018 - mdpi.com
In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor
(NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is …

Improved post-radiation behavior of FinFET based CMOS with workfunction modulated gate

A Ray, A Naugarhiya, GP Mishra - Physica Scripta, 2024 - iopscience.iop.org
The total ionizing dose (TID) effect of modulated gate workfunction (MGW) FinFET based
CMOS inverter is designed and analyzed. The post radiation analysis of the voltage transfer …

Examination of radiation effects on Cs2LiYCl6:Ce3+ scintillators using a 100 MeV proton beam

U Nam, S Youn, WK Park, J Pyo, J Sohn… - Journal of the Korean …, 2022 - Springer
Abstract Cs2LiYCl6: Ce3+ scintillator is worthwhile to study, since it has good pulse shape
discrimination capability which lead to thermal or fast neutron detection based on the …

[PDF][PDF] Calliope 60Co gamma irradiation facility for space qualification at ENEA-casaccia research centre (Rome)

S Baccaro, A Cemmi, I Di Sarcina - Phys Astron Int J, 2019 - academia.edu
The radiation damage induced by hostile environment on optical and electronic components
and devices underwent several studies since last decades. In order to evaluate the radiation …