Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness
and biocompatibility, making it a promising material for applications in biomedical device …

Uniformly sized silicon carbide nanoparticles (SiC NPs) were prepared using the
carbothermal reduction method, and subsequently dispersed into an epoxy resin matrix to …

A fully integrated, wireless neural interface device is being developed to free patients from
the restriction and risk of infection associated with a transcutaneous wired connection. This …

This paper reports on the preparation and characterization of hydrogenated amorphous
silicon carbide films prepared by H2 diluted silane–methane plasma. Carbon-rich a-SiC: H …

Hydrogenated amorphous silicon carbide (a-Si 1− x C x: H) films with different carbon
concentrations have been deposited using the helicon wave plasma-enhanced chemical …

The use of very high frequency (VHF) plasma enhanced chemical vapor deposition in a
capacitive discharge is investigated to fabricate hydrogenated amorphous silicon carbon …

Amorphous intrinsic silicon carbide (a-SiCx: H (i)) films and amorphous silicon carbonitride
(SiCxNy: H) films have been deposited by plasma enhanced chemical vapor deposition from …

We have investigated the growth of a-Si1xCx: H using the electron cyclotron resonance
chemical vapor deposition ECR-CVD technique, under the conditions of high microwave …

Hydrogenated amorphous silicon-carbon alloys (a-Si1-x C x: H) deposited by plasma
techniques are important for a large variety of applications from microelectronics and …

We report on the results of the investigation of optical properties and structure of PECVD
deposited thin films of hydrogenated polysilicon determined by UV–Vis and IR spectroscopy …