A memory opening can be formed through an alternating stack of insulating layers and
sacrificial material layers over a substrate. A material layer stack containing, from outside to …

A NAND device has at least a 3× 3 array of vertical NAND strings in which the control gate
electrodes are continuous in the array and do not have an air gap or a dielectric filled trench …

(57) ABSTRACT A first stack of alternating layers including first electrically insulating layers
and first sacrificial material layers is formed with first stepped Surfaces. First memory …

A memory film and a semiconductor channel can be formed within each memory opening
that extends through a stack including an alternating plurality of insulator layers and …

Undesirable metal contamination from a selective metal deposition process can be
minimized or eliminated by employing a first material layer on a bevel and a back side of a …

A memory opening can be formed through an alternating stack of insulating layers and
sacrificial material layers provided over a substrate. Annular etch stop material portions are …

(57) ABSTRACT A vertically repeating Stack of a unit layer stack is formed over a substrate.
The unit layer stack includes a sacrificial material layer, a lower silicon oxide material layer …

A first tier structure including a first alternating stack of first insulating layers and first
sacrificial material layers is formed over a substrate. First support openings and first memory …

Discrete silicon nitride portions can be formed at each level of electrically conductive layers
in an alternating stack of insulating layers and the electrically conductive layers. The discrete …

(57) ABSTRACT A method of forming a device includes forming an alternat ing stack of
insulating layers and sacrificial material layers over a Substrate, forming a memory opening …