The reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and
the projection imaging of these masks by all-reflective systems introduce several significant …

Background: The successful introduction of extreme ultraviolet (EUV) lithography to high
volume manufacturing has increased the interest to push this technology to its ultimate limits …

Next-generation extreme ultraviolet (EUV) systems with numerical apertures of 0.55 have
the potential to provide sub-8-nm half-pitch resolution. The increased importance of …

Extreme ultraviolet (EUV) lithography is being industrialized as the next candidate printing
technique for high-volume manufacturing of scaled down integrated circuits. At mask level …

We show, in simulation and by wafer exposures, how to improve an EUV Single Exposure
Metal direct print at NA 0.33. Based on a fundamental understanding of Mask 3D effects, we …

In order to succeed with such low-k 1 lithography at EUV wavelength, we need to be able to
print a grating at high contrast similar to ArF immersion tools, where a contrast exceeding …

With the introduction of EUV lithography into early manufacturing, the lithography community
still struggles with some imaging issues, like the magnitude of usable depth of focus, and …

The mask plays a significant role as an active optical element in lithography, for both deep
ultraviolet (DUV) and extreme ultraviolet (EUV) lithography. Mask-induced and feature …

Assist features are commonly used in DUV lithography to improve the lithographic process
window of isolated features under illumination conditions that enable the printability of …

EUV lithography is entering High Volume Manufacturing at relative high Rayleigh factor k 1
above 0.4. In comparison immersion lithography has been pushed to k 1 values of 0.3 or …