Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Resistive switching memory for high density storage and computing
The resistive random access memory (RRAM) has stimulated a variety of promising
applications including programmable analog circuit, massive data storage, neuromorphic …
applications including programmable analog circuit, massive data storage, neuromorphic …
Flexible parylene C-based RRAM array for neuromorphic applications
Resistive random-access memory (RRAM) has been explored to implement neuromorphic
systems to accelerate neural networks. In this study, an RRAM crossbar array using …
systems to accelerate neural networks. In this study, an RRAM crossbar array using …
Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity
N Sommer, R Dittmann, S Menzel - Physical Review Applied, 2023 - APS
Valence-change memory (VCM) cells are promising candidates for future nonvolatile
memory devices. A special setup of VCM devices consists of bilayer cells where two thin …
memory devices. A special setup of VCM devices consists of bilayer cells where two thin …
[HTML][HTML] PrxCa1− xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem
The neural network enables efficient solutions for Nondeterministic Polynomial-time (NP)
hard problems, which are challenging for conventional von Neumann computing. The …
hard problems, which are challenging for conventional von Neumann computing. The …
Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr0.7Ca0.3MnO3 Memristor
Y Pyo, JU Woo, HG Hwang, S Nahm, J Jeong - Nanomaterials, 2021 - mdpi.com
An amorphous Pr0. 7Ca0. 3MnO3 (PCMO) film was grown on a TiN/SiO2/Si (TiN–Si)
substrate at 300° C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor …
substrate at 300° C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor …
Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM
Pr1–x Ca x MnO3 (PCMO)-based resistance random access memory (RRAM) is attractive in
large-scale memory and neuromorphic applications as it is nonfilamentary and area …
large-scale memory and neuromorphic applications as it is nonfilamentary and area …
Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing
S Lashkare, S Subramoney… - IEEE Electron Device …, 2020 - ieeexplore.ieee.org
Resistive random-access memory (RRAM) devices that can execute logic are promising for
in-memory computing. In state-of-the-art, a complementary resistive switch (CRS) bit-cell of …
in-memory computing. In state-of-the-art, a complementary resistive switch (CRS) bit-cell of …
Relevance of Hidden Transients in the Steady State Memristor Measurements
J Sakhuja, K Kaushik, V Saraswat… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Highly non-linear selector (S) devices integrated with emerging memristor (R) devices are
vital to mitigate sneak path leakage currents in crossbar arrays. For a functional 1S1R bit …
vital to mitigate sneak path leakage currents in crossbar arrays. For a functional 1S1R bit …
Calculation and study for the growth process and electrical characteristics of the conductive filament in nanoscale resistance memory under current-driven mode
Q Ke, Y Dai - Nanotechnology, 2023 - iopscience.iop.org
After investigating the behavior of ions during the growth of conductive filaments, we
suggested a model for the growth process and electrical characteristics of the conductive …
suggested a model for the growth process and electrical characteristics of the conductive …