Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …
Anomalous structural phase transformation in swift heavy ion-irradiated δ-Sc4Hf3O12
M Iwasaki, Y Kanazawa, D Manago, MK Patel… - Journal of Applied …, 2022 - pubs.aip.org
Swift heavy ion irradiation was carried out to examine the ionization effects on structural
changes of δ-Sc 4 Hf 3 O 12 in which oxygen vacancies are regularly arranged. The …
changes of δ-Sc 4 Hf 3 O 12 in which oxygen vacancies are regularly arranged. The …
Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam
R Nakamura, M Miyamoto, M Ishimaru - Journal of Applied Physics, 2023 - pubs.aip.org
Much effort has been expended to obtain thin films of metastable solid solutions of
germanium (Ge) that contain as high tin (Sn) content as possible because of their excellent …
germanium (Ge) that contain as high tin (Sn) content as possible because of their excellent …
Direct observations of crystallization processes of amorphous GeSn during thermal annealing: A temperature window for suppressing Sn segregation
M Higashiyama, M Ishimaru, M Okugawa… - Journal of Applied …, 2019 - pubs.aip.org
The solubility limit of tin (Sn) in germanium (Ge) is very small, and, therefore, it is difficult to
synthesize high Sn concentration GeSn crystals by conventional methods. An amorphous …
synthesize high Sn concentration GeSn crystals by conventional methods. An amorphous …
Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation
K Inenaga, R Motomura, M Ishimaru… - Journal of Applied …, 2020 - pubs.aip.org
Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-
beam irradiation were examined using transmission electron microscopy (TEM) …
beam irradiation were examined using transmission electron microscopy (TEM) …
Review of “12th Japanese-Polish Joint Seminar on Micro and Nano Analysis (August 29–September 1, 2018)”
M Ishimaru - Materials transactions, 2021 - jstage.jst.go.jp
Abstract “The 12th Japanese-Polish Joint Seminar on Micro and Nano Analysis” was held in
Fukuoka, Japan from August 29 to September 1, 2018, and the proceedings were published …
Fukuoka, Japan from August 29 to September 1, 2018, and the proceedings were published …
[PDF][PDF] SYNTHESIS OF HIGH Sn CONCENTRATION GeSn BY RECRYSTALLIZATION OF AMORPHOUS PHASE
M Higashiyama, M Ishimaru, M Okugawa, R Nakamura - 2018 - tms.org
Amorphous structures of germanium-tin (GeSn) thin films as well as their recrystallization
processes during thermal annealing were examined by means of transmission electron …
processes during thermal annealing were examined by means of transmission electron …
電子励起効果によるアモルファス物質の低温結晶化
石丸学, 仲村龍介 - 日本結晶学会誌, 2019 - jstage.jst.go.jp
抄録 Since irradiation often induces atomic configurations far from the equilibrium state,
knowledge of structural changes under radiation environments is of technological …
knowledge of structural changes under radiation environments is of technological …
アモルファスGeSn の結晶化におけるSn の振る舞い
石丸学, 仲村龍介 - まてりあ, 2020 - jstage.jst.go.jp
九州工業大学大学院工学研究院 教授 (〒 804 8550 北九州市戸畑区仙水町 1 1)
大阪府立大学大学院工学研究科 准教授 Behavior of Sn Atoms During Crystallization of …
大阪府立大学大学院工学研究科 准教授 Behavior of Sn Atoms During Crystallization of …