Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

A Elbaz, R Arefin, E Sakat, B Wang, E Herth… - ACS …, 2020 - ACS Publications
GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …

Anomalous structural phase transformation in swift heavy ion-irradiated δ-Sc4Hf3O12

M Iwasaki, Y Kanazawa, D Manago, MK Patel… - Journal of Applied …, 2022 - pubs.aip.org
Swift heavy ion irradiation was carried out to examine the ionization effects on structural
changes of δ-Sc 4 Hf 3 O 12 in which oxygen vacancies are regularly arranged. The …

Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam

R Nakamura, M Miyamoto, M Ishimaru - Journal of Applied Physics, 2023 - pubs.aip.org
Much effort has been expended to obtain thin films of metastable solid solutions of
germanium (Ge) that contain as high tin (Sn) content as possible because of their excellent …

Direct observations of crystallization processes of amorphous GeSn during thermal annealing: A temperature window for suppressing Sn segregation

M Higashiyama, M Ishimaru, M Okugawa… - Journal of Applied …, 2019 - pubs.aip.org
The solubility limit of tin (Sn) in germanium (Ge) is very small, and, therefore, it is difficult to
synthesize high Sn concentration GeSn crystals by conventional methods. An amorphous …

Liquid-mediated crystallization of amorphous GeSn under electron beam irradiation

K Inenaga, R Motomura, M Ishimaru… - Journal of Applied …, 2020 - pubs.aip.org
Crystallization processes of amorphous germanium–tin (GeSn) under low-energy electron-
beam irradiation were examined using transmission electron microscopy (TEM) …

Review of “12th Japanese-Polish Joint Seminar on Micro and Nano Analysis (August 29–September 1, 2018)”

M Ishimaru - Materials transactions, 2021 - jstage.jst.go.jp
Abstract “The 12th Japanese-Polish Joint Seminar on Micro and Nano Analysis” was held in
Fukuoka, Japan from August 29 to September 1, 2018, and the proceedings were published …

[PDF][PDF] SYNTHESIS OF HIGH Sn CONCENTRATION GeSn BY RECRYSTALLIZATION OF AMORPHOUS PHASE

M Higashiyama, M Ishimaru, M Okugawa, R Nakamura - 2018 - tms.org
Amorphous structures of germanium-tin (GeSn) thin films as well as their recrystallization
processes during thermal annealing were examined by means of transmission electron …

電子励起効果によるアモルファス物質の低温結晶化

石丸学, 仲村龍介 - 日本結晶学会誌, 2019 - jstage.jst.go.jp
抄録 Since irradiation often induces atomic configurations far from the equilibrium state,
knowledge of structural changes under radiation environments is of technological …

アモルファスGeSn の結晶化におけるSn の振る舞い

石丸学, 仲村龍介 - まてりあ, 2020 - jstage.jst.go.jp
 九州工業大学大学院工学研究院 教授 (〒 804 8550 北九州市戸畑区仙水町 1 1)
大阪府立大学大学院工学研究科 准教授 Behavior of Sn Atoms During Crystallization of …