It has been several years since InGaN/GaN light-emitting diodes (LEDs) on nonpolar and
semipolar orientations were first demonstrated. Prominent performance and inherent …

This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …

This work represents a comprehensive attempt to correlate the heteroepitaxial dynamics in
experiments with fundamental principles in crystal growth using the kinetic Wulff plot (or v …

For nonpolar and semipolar orientations of GaN heteroepitaxially grown on sapphire
substrates, the development of growth procedures to improve surface morphology and …

We present metal organic vapor phase epitaxy growth of polarization reduced, wurtzitic
gallium nitride layers with an 18 inclination of the c-axis to the surface normal on planar Si …

We report on the growth of high-quality semi-polar (11–22) GaN with a smooth surface on a
patterned Si (113) substrate by delicately tuning the V/III ratio in a three-step approach. The …

Patterned (113) Si substrates have been fabricated for the growth of (11-22) semi-polar
GaN, which completely eliminates one of the great issues in the growth of semi-polar GaN …

There has been increasing research interest in nonpolar and semipolar GaN for high
brightness light-emitting diode (LED) and laser diode applications. Due to the very limited …

A two-step approach has been developed for the growth of semi-polar (11–22) GaN on
patterned (113) silicon substrates, which effectively eliminates Ga melt-back etching at a …

Without catalysis, hexagonal zinc oxide (ZnO) microcrystals were successfully grown on
(0001) sapphire substrate in a home made chemical vapor deposition system under …