An Improved Method to Estimate Turn-on Switching Loss of 650V GaN HEMTs in Hard-switching Topology

Estimation of switching losses considering non-linear parasitic capacitances of GaN E-HEMT

I Lee, D Yoon, Y Cho - Journal of Power Electronics, 2023 - Springer
The power loss estimation of a gallium nitride enhancement-mode high electron mobility
transistor (GaN E-HEMT) is necessary to optimize a thermal model of a power conversion …
被引用次数：2 相关文章 所有 2 个版本