From ferroelectric material optimization to neuromorphic devices
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …
achieved polarization state, ferroelectric materials have a unique potential for low power …
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Demonstration of multiply-accumulate operation with 28 nm fefet crossbar array
This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …
Read-optimized 28nm hkmg multibit fefet synapses for inference-engine applications
This paper reports 2bits/cell ferroelectric FET (FeFET) devices with 500 ns write pulse of
maximum amplitude 4.5 V for inference-engine applications. FeFET devices were fabricated …
maximum amplitude 4.5 V for inference-engine applications. FeFET devices were fabricated …
28 nm HKMG-based current limited FeFET crossbar-array for inference application
This article reports a novel ferroelectric field-effect transistor (FeFET)-based crossbar array
cascaded with an external resistor. The external resistor is shunted with the column of the …
cascaded with an external resistor. The external resistor is shunted with the column of the …
On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability
Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …
memory and emerging applications on a silicon electronic platform after the discovery of the …
Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Remote oxygen scavenging of the interfacial oxide layer in ferroelectric hafnium–zirconium oxide-based metal–oxide–semiconductor structures
Discovery of ferroelectricity in HfO2 has sparked a lot of interest in its use in memory and
logic due to its CMOS compatibility and scalability. Devices that use ferroelectric HfO2 are …
logic due to its CMOS compatibility and scalability. Devices that use ferroelectric HfO2 are …
Enhanced memory properties of HfO2-based ferroelectric capacitor by inserting Al2O3/ZrO2 stack interfacial layer
YC Li, XX Li, T Huang, ZY Gu, QJ Yu, YC Liu… - Applied Physics …, 2023 - pubs.aip.org
HfO 2-based ferroelectrics have been regarded as a promising material to integrate into a
gate stack of silicon-based field-effect-transistors (FETs). However, a narrower memory …
gate stack of silicon-based field-effect-transistors (FETs). However, a narrower memory …