Nitrogen at the interface and its influence on luminescence and interface defects

D Hiller, S Goetze, F Munnik, M Jivanescu… - Physical Review B …, 2010 - APS
The influence of the high-temperature annealing ambient, ie, N 2 and Ar on size controlled
Si nanocrystals (NCs) ranging from∼ 2 to∼ 6 nm embedded in SiO 2 has been investigated …

Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition

M Perálvarez, J Barreto, J Carreras, A Morales… - …, 2009 - iopscience.iop.org
Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical
vapour deposition Page 1 Nanotechnology Si-nanocrystal-based LEDs fabricated by ion …

The mechanism of electrical annihilation of conductive paths and charge trapping in silicon-rich oxides

A Morales-Sánchez, J Barreto, C Domínguez… - …, 2008 - iopscience.iop.org
The electrical properties of silicon-rich oxide (SRO) films in metal–oxide–semiconductor-like
structures were analysed by current versus voltage (I–V) and capacitance versus voltage (C …

[HTML][HTML] Comparison of light emitting capacitors with textured and polished silicon substrates towards the understanding of the emission mechanisms

J Alarcón-Salazar, MA Vásquez-Agustín… - Journal of …, 2018 - Elsevier
We experimentally compare the optical and electrical characteristics of Light Emitting
Capacitors (LECs) using textured and polished silicon surface. The goal of this work is …

Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films

A Morales-Sánchez, J Barreto, C Domínguez… - …, 2008 - iopscience.iop.org
Silicon nanoparticles (Si-nps) embedded in silicon oxide matrix were created using silicon-
rich oxide (SRO) films deposited by low pressure chemical vapour deposition (LPCVD) …

DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitors

J Juvert, AAG Fernández… - Journal of lightwave …, 2013 - ieeexplore.ieee.org
We analyze the influence of the fabrication technique and the silicon excess on the power
efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in …

Influence by layer structure on the output EL of CMOS compatible silicon-based light emitters

AA Gonzalez-Fernandez, J Juvert… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Fully combined metal-oxide-semiconductor compatible light-emitting devices based on nano
bi-layer structures are fabricated. The active layers are composed of silicon nitride on top of …

Blue–green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures

Y Berencén, O Jambois, JM Ramírez, JM Rebled… - Optics letters, 2011 - opg.optica.org
Blue–green to near-IR switching electroluminescence (EL) has been achieved in a metal-
oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si …

Análisis, diseño, fabricación y caracterización de los elementos básicos para integración de un circuito fotónico totalmente en silicio

DENCCON LA - 2017 - inaoe.repositorioinstitucional.mx
This work studies the monolithic integration on silicon of a light source, an optical waveguide
and a photodetector. The aim is to make a photonic integrated circuit (PIC) using …

Luminescence from Si-Implanted SiO2-Si3N4 Nano Bi-Layers for Electrophotonic Integrated Si Light Sources

AA González-Fernández, J Juvert, M Aceves-Mijares… - Sensors, 2019 - mdpi.com
In this paper, we present structural and luminescence studies of silicon-rich silicon oxide
(SRO) and SRO-Si 3 N 4 bi-layers for integration in emitter-waveguide pairs that can be …