DA Pino-Monroy, P Scheer, MK Bouchoucha… - IEEE …, 2022 - ieeexplore.ieee.org
This paper presents a 7-parameter analytical model of the MOS transistor based on the inversion charge targeted at the development of simplified analytical circuit design …
In this paper, a new technique for improvement on the DC voltage gain, while keeping the high-linearity in symmetrical operational transconductance amplifier (OTA) bulk-driven (BD) …
Analog computing is attractive compared to digital computing due to its potential for achieving higher computational density and higher energy efficiency. However, unlike digital …
In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into …
Bias-scalable analog computing is attractive for implementing machine learning (ML) processors with distinct power-performance specifications. For instance, ML …
This work introduces a process to optimize the design of a down-conversion mixer using an innovative strategy based on the gm/ID methodology. The proposed process relies on a set …
In this paper a self-biased current reference based on Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Zero Temperature Coefficient (ZTC) condition is proposed. It can …
J Poupon, MJ Barragan, A Cathelin… - … Symposium on Circuits …, 2024 - ieeexplore.ieee.org
Due to their continuous nature across all the inversion regions of MOS transistors, charge- based models are a promising analytical tool for preliminary design sizing that brings the …
This paper presents the design of an integrated temperature sensor. The sensor was manufactured using the 3 µm CMOS technology. The proportional to absolute temperature …