A compact transregional model for digital CMOS circuits operating near threshold

S Keller, DM Harris, AJ Martin - IEEE Transactions on Very …, 2013 - ieeexplore.ieee.org
Power dissipation is currently one of the most important design constraints in digital systems.
In order to reduce power and energy demands in the foremost technology, namely CMOS, it …

Design-oriented all-regime all-region 7-parameter short-channel MOSFET model based on inversion charge

DA Pino-Monroy, P Scheer, MK Bouchoucha… - IEEE …, 2022 - ieeexplore.ieee.org
This paper presents a 7-parameter analytical model of the MOS transistor based on the
inversion charge targeted at the development of simplified analytical circuit design …

A 1.9 nW, sub-1 V, 542 pA/V linear bulk-driven OTA with 154 dB CMRR for bio-sensing applications

R Sanchotene Silva, LH Rodovalho, O Aiello… - Journal of Low Power …, 2021 - mdpi.com
In this paper, a new technique for improvement on the DC voltage gain, while keeping the
high-linearity in symmetrical operational transconductance amplifier (OTA) bulk-driven (BD) …

Process, bias, and temperature scalable cmos analog computing circuits for machine learning

P Kumar, A Nandi, S Chakrabartty… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Analog computing is attractive compared to digital computing due to its potential for
achieving higher computational density and higher energy efficiency. However, unlike digital …

Analytical modeling and experimental validation of threshold voltage in BSIM6 MOSFET model

H Agarwal, C Gupta, P Kushwaha… - IEEE journal of the …, 2015 - ieeexplore.ieee.org
In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The
model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into …

Bias-scalable near-memory CMOS analog processor for machine learning

P Kumar, A Nandi, S Chakrabartty… - IEEE Journal on …, 2023 - ieeexplore.ieee.org
Bias-scalable analog computing is attractive for implementing machine learning (ML)
processors with distinct power-performance specifications. For instance, ML …

Innovative strategy for mixer design optimization based on gm/ID methodology

G Piccinni, C Talarico, G Avitabile, G Coviello - Electronics, 2019 - mdpi.com
This work introduces a process to optimize the design of a down-conversion mixer using an
innovative strategy based on the gm/ID methodology. The proposed process relies on a set …

MOSFET ZTC condition analysis for a self-biased current reference design

P Toledo, H Klimach, D Cordova, S Bampi… - Journal of integrated …, 2015 - jics.org.br
In this paper a self-biased current reference based on Metal-Oxide-Semiconductor Field
Effect Transistor (MOSFET) Zero Temperature Coefficient (ZTC) condition is proposed. It can …

Dynamic Analysis of RF CMOS Inverter-Based Ring Oscillators using an All-Region MOSFET Charge-Based Model in 28nm FD-SOI CMOS

J Poupon, MJ Barragan, A Cathelin… - … Symposium on Circuits …, 2024 - ieeexplore.ieee.org
Due to their continuous nature across all the inversion regions of MOS transistors, charge-
based models are a promising analytical tool for preliminary design sizing that brings the …

Design, Fabrication, and Characterization of a PTAT Sensor Using CMOS Technology

M Szermer, M Jankowski, M Janicki - Electronics, 2024 - mdpi.com
This paper presents the design of an integrated temperature sensor. The sensor was
manufactured using the 3 µm CMOS technology. The proportional to absolute temperature …