[HTML][HTML] Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method
Z Zhang, P Yan, Q Song, H Chen, W Zhang… - Fundamental …, 2023 - Elsevier
Compared with silicon, gallium nitride, silicon carbide, and other traditional semiconductors,
gallium oxide (Ga 2 O 3) who possesses, an ultrawide bandgap of approximately 5.0 eV and …
gallium oxide (Ga 2 O 3) who possesses, an ultrawide bandgap of approximately 5.0 eV and …
Design of n-CdS/p-CuInTe2/p + -MoS2 thin film solar cell with a power conversion efficiency of 34.32%
Copper indium telluride (CuInTe_2)-based n-CdS/p-CuInTe_2/p+-MoS_2 double-
heterostructure solar cell has been investigated numerically by solar cell capacitance …
heterostructure solar cell has been investigated numerically by solar cell capacitance …
Aerosol-Assisted Chemical Vapor Deposition of MoS2 with a Thiourea Sulfur Source: Single-Source Precursors vs Coreactant Mixtures
IM Germaine, MB Huttel, MP Alderman… - … Applied Materials & …, 2023 - ACS Publications
Aerosol-assisted chemical vapor deposition of MoS2 from solutions containing the single-
source precursors cis-Mo (CO) 4 (TMTU) 2 and Mo (CO) 5 (TMTU) in toluene was compared …
source precursors cis-Mo (CO) 4 (TMTU) 2 and Mo (CO) 5 (TMTU) in toluene was compared …
Molybdenum (IV) dithiocarboxylates as single-source precursors for AACVD of MoS 2 thin films
S Muhammad, ET Ferenczy, IM Germaine… - Dalton …, 2022 - pubs.rsc.org
Tetrakis (dithiocarboxylato) molybdenum (IV) complexes of the type Mo (S2CR) 4 (R= Me,
Et, iPr, Ph) were synthesized, characterized, and prescreened as precursors for aerosol …
Et, iPr, Ph) were synthesized, characterized, and prescreened as precursors for aerosol …
Direct synthesis of submillimeter-sized few-layer WS2 and WS0. 3Se1. 7 by mist chemical vapor deposition and its application to complementary mos inverter
A Kuddus, K Yokoyama, H Shirai - Semiconductor Science and …, 2022 - iopscience.iop.org
This study investigated the direct synthesis of submillimeter-sized few-layer tungsten
disulfide (WS 2) and tungsten sulfoselenide (WS 0.3 Se 1.7) using the mist chemical vapor …
disulfide (WS 2) and tungsten sulfoselenide (WS 0.3 Se 1.7) using the mist chemical vapor …
Numerical evaluation of bi-facial ZnO/MoTe 2 photovoltaic solar cells with N-doped Cu 2 O as the BSF layer for enhancing V OC via device simulation
Molybdenum telluride (MoTe2) shows great promise as a solar absorber material for
photovoltaic (PV) cells owing to its wide absorption range, adjustable bandgap, and lack of …
photovoltaic (PV) cells owing to its wide absorption range, adjustable bandgap, and lack of …
Numerical evaluation and optimization of high sensitivity Cu2CdSnSe4 photodetector
Copper cadmium tin selenide (Cu 2 CdSnSe 4) based photodetector (PD) has been
explored with the solar cell capacitance simulator (SCAPS-1D). Herein, cadmium sulfide …
explored with the solar cell capacitance simulator (SCAPS-1D). Herein, cadmium sulfide …
Spatial and Size Distributions of Ti(C5H7O2)2[(CH3)2CHO]2 Mist Particles in a Tubular Furnace for Conformal and Uniform Deposition of Amorphous TiO2 …
A Kuddus, T Sato, K Yokoyama… - physica status solidi (a …, 2024 - Wiley Online Library
The spatial and size distributions of titanium diisopropoxide bisacetylacetonate [(C5H7O2) 2
[(CH3) 2CHO] 2, also known as Ti (acac) 2 (OiPr) 2] mist, diluted in CH3OH, are investigated …
[(CH3) 2CHO] 2, also known as Ti (acac) 2 (OiPr) 2] mist, diluted in CH3OH, are investigated …
Performance analysis of p-MoTe2/n-MoSe2-based bifacial solar cells with p+-N: Cu2O as BSF layer by SCAPS-1D
Photovoltaic solar cells (PVSC) with Molybdenum telluride (MoTe 2) have received
considerable attention because of their wide range of absorption, along with the absence of …
considerable attention because of their wide range of absorption, along with the absence of …
Carrier Transport Properties in Few-Layer WS0.3Se1.7/(WOx)WS0.3Se1.7 Lateral p+–n Junctions Using a Metal–Oxide–Semiconductor Field-Effect Transistor …
A Kuddus, K Yokoyama, W Fan, K Ueno… - ACS Applied Electronic …, 2023 - ACS Publications
The carrier transport properties of lateral p+–n junctions composed of few-layer WS0. 3Se1.
7/(WO x) WS0. 3Se1. 7 on thermally grown SiO2 or high-κ amorphous Al0. 74Ti0. 26O y …
7/(WO x) WS0. 3Se1. 7 on thermally grown SiO2 or high-κ amorphous Al0. 74Ti0. 26O y …