In this study, the oxygen flow rate (OFR) dependence of negative bias illumination stress
(NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin …

We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple
defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and …

We investigated degradation mechanism of a-IGZO TFTs under NBIS with different
wavelengths λ and intensities IL of light. Negative gate bias was applied for 4000 s while …

This letter proposes a small-area and low-power scan driver using a coplanar amorphous
indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with a dual gate for TFT liquid …

We investigate the hysteresis in the transfer characteristic of amorphous indium-gallium-zinc-
oxide thin-film transistor by controlling the sweep waveform of the gate voltage (Vg) provided …

We investigated the hysteresis and off-current (I off) of amorphous In-Ga-Zn oxide thin-film
transistors illuminated by 400 nm light at various intensities. Both hysteresis and I off are …

The use of co-sputtered Zirconium Silicon Oxide (Zr x Si 1− x O 2) gate dielectrics to improve
the performance of α-IGZO TFT is demonstrated. Through modulating the sputtering power …

The multiple gate-voltage () dependencies of the OFF-state photocurrent () with increasing,
decreasing, or being constant are observed in amorphous InZnO (a-IZO) thin-film transistors …

In this paper, we investigate the response time of oxygen vacancies on the hysteresis for the
amorphous indium–gallium–zinc oxide thin-film transistors. The fast pulse measurement …

In this work, an electrical stability model based on surface potential is presented for
amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress …