Results of investigations into surface processes of the formation of germanium and silicon
nanostructures are analyzed. A mechanism of three-dimensional island nucleation and …

Создание полупроводниковых структур с новыми физическими свойствами является
основной задачей нанотехнологии, имеющей целью расширение пределов …

Predominant dislocation types in solar silicon are dissociated into 30°-and 90°-partials with
reconstructed cores. Besides shallow 1D-band localized in their strain field and a quasi-2D …

Well‐controlled fabrication of dislocation networks in Si using direct wafer bonding opens
broad possibilities for nanotechnology applications. Concepts of dislocation‐network‐based …

The minority carrier lifetimes of a variety of polycrystalline silicon solar cells are estimated
from temperature-dependent quantum efficiency data. In most cases the lifetimes have …

There is a growing demand for a silicon-based light emitters generating a light with a
wavelength in of 1.3-1.6 μm range, which can be integrated into silicon chips and used for in …

Today, after more than 70 years of continued progress on silicon technology, about 85% of
cumulative installed photovolatic (PV) modules are based on crystalline silicon (c‐Si). PV …

Variation in stacking fault energy with annealing at 1173 K were identified in Czochralski-
grown silicon crystals heavily doped with n-or p-type dopant atoms. In n-type crystals, the …

Atomic-scale understanding and control of dislocation cores is of great technological
importance, because they act as recombination centers for charge carriers in optoelectronic …

Silicon layers grown on oxidized Si surfaces at temperatures between 400 and 500 C exhibit
intense photoluminescence (PL) in the D1 region after annealing at high temperatures (up to …