Comparative analysis of STT and SOT based MRAMs for last level caches
In recent years, magnetic RAMs have stimulated considerable research interest due to its
high area-density and low leakage-power with comparable speed that makes it a strong …
high area-density and low leakage-power with comparable speed that makes it a strong …
Computing-in-memory architecture using energy-efficient multilevel voltage-controlled spin-orbit torque device
S Shreya, A Jain, BK Kaushik - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
Conventional von Neumann architecture suffers from data trafficking and power hungriness
between memory and processing units. Recent architectures escalating to overcome these …
between memory and processing units. Recent architectures escalating to overcome these …
SOT and STT-based 4-bit MRAM cell for high-density memory applications
This article presents a multilevel design for spin-orbit torque (SOT)-assisted spin-transfer
torque (STT)-based 4-bit magnetic random access memory (MRAM). Multilevel cell (MLC) …
torque (STT)-based 4-bit magnetic random access memory (MRAM). Multilevel cell (MLC) …
Modeling of voltage-controlled spin–orbit torque MRAM for multilevel switching application
S Shreya, BK Kaushik - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
Magnetic tunnel junction (MTJ) has emerged as a viable candidate for next-generation
memory and logic applications. Manipulation of the magnetic and electric field can control …
memory and logic applications. Manipulation of the magnetic and electric field can control …
A novel STT–SOT MTJ-based nonvolatile SRAM for power gating applications
S Tripathi, S Choudhary… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This article proposes novel nonvolatile (NV) static random access memory (SRAM) circuits
based on spin transfer torque (STT) and spin orbit torque (SOT) operated magnetic tunnel …
based on spin transfer torque (STT) and spin orbit torque (SOT) operated magnetic tunnel …
Computing-in-memory using voltage-controlled spin-orbit torque based MRAM array
S Shreya, A Jain, BK Kaushik - Microelectronics Journal, 2021 - Elsevier
Abstract The Computing-in-Memory (CiM) is one of the best solutions to overcome the data
transferring limitation between memory and processor. Moreover, spintronics based devices …
transferring limitation between memory and processor. Moreover, spintronics based devices …
Magnetic nonvolatile SRAM based on voltage-gated spin-orbit-torque magnetic tunnel junctions
This article proposes two different magnetic nonvolatile-static random access memory (MNV-
SRAM) cell circuits for low-power, high-speed, and high-reliable backup operation with a …
SRAM) cell circuits for low-power, high-speed, and high-reliable backup operation with a …
An 8T PA attack resilient NVSRAM for in-memory-computing applications
S Tripathi, S Choudhary… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The proposed 8T Non-Volatile SRAM (NVSRAM) is designed to be resistant to power
analysis (PA) attacks and is suitable for in-memory computing (IMC) applications. Our …
analysis (PA) attacks and is suitable for in-memory computing (IMC) applications. Our …
Highly Reliable, Stable and Store Energy efficient 8T/9T-2D-2MTJ NVSRAMs
S Tripathi, S Choudhary… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Non-Volatile SRAMs exhibit zero static power loss which is eminent for future on-chip
memories. Thus, in this brief, two simple and scalable designs of NVSRAM (8T&9T-2D …
memories. Thus, in this brief, two simple and scalable designs of NVSRAM (8T&9T-2D …
A Reconfigurable Non-Volatile Memory Architecture for Prolonged Wearable Health Monitoring Devices
MA Gargari, N Eslami… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Wearable devices have broadened the horizons of healthcare systems within consumer
digital products. However, these devices have limited power resources, emphasizing the …
digital products. However, these devices have limited power resources, emphasizing the …