With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it
has become imperative to have health safety systems in place to curb the ill‐effects on …

Abstract Gallium oxide (Ga 2 O 3) is an ultrawide bandgap semiconducting material that has
been developed for many advanced technology and engineering applications and has …

The photodetectors based on the wide bandgap semiconductor (WBS)/Si heterojunction
have attracted more and more attention in recent years due to their excellent photoelectric …

Killer defects are responsible for leakage current and breakdown in β-gallium oxide (β-Ga 2
O 3) Schottky barrier diodes, which are crucial for power device applications. We have found …

Fabricating a heterojunction photodetector is efficient to take advantage of the built‐in
electric field formed by heterojunction and thus improve the performance of photodetector …

Low dimensional nanostructures (NSs) exhibit superior properties for the fabrication of
electronic and optoelectronic devices. The integration of these structures into the …

Self‐powered solar‐blind photodiodes with convenient operation, easy fabrication, and
weak‐light sensitivity, are highly desired in environmental monitoring and deep space …

Through the construction of a PEDOT: PSS/α-Ga2O3 heterojuntion on FTO by hydrothermal,
low-temperature annealing and spin-coating processes, a self-powered PEDOT: PSS/α …

Abstract Ultrasensitive UV-C photodetector (PD) based on β-Ga 2 O 3 nanowires (NWs)
were fabricated on p-type Si substrate using glancing angle deposition technique inside …

Recently, heterojunctions-based photodetectors (PDs) with outstanding photosensitivity and
fast switching time received substantial attention due to their broadband (BB) photoresponse …