In the new manufacturing area, the Chinese textile industry is facing the opportunities and
challenges under the sustainable development model and advanced manufacturing …

In this article, the transfer and output characteristics of an electrostatically doped (ED) 4-
armchair silicene nanoribbon (4-ASiNR) field-effect transistor (FET) with three gates are …

We systematically study the transport properties of arsenene nanoribbon tunneling field-
effect transistors (TFETs) along the armchair directions using first-principles calculations …

This paper evaluates the performance of electrostatic-doped silicene nanoribbon field-effect
transistors (ED SiNR-FET) and graphene nanoribbon field-effect transistors (ED GNR-FET) …

Tunnel-FETs are ideal for low-power electronic applications, particularly in areas requiring
steep subthreshold slope and energy-efficient switching. However, traditional TFETs face …

A dual-gate electrostatically-doped monolayer transition metal dichalcogenide tunneling
field-effect transistor (EDTFET) and a chemically-doped monolayer transition metal …

A simulation-based study of an n-type six-dimer-line armchair graphene nanoribbon (6-
AGNR) tunnel field-effect transistor with asymmetric reservoir doping density is carried out …

Digital transformation (DT) has become a crucial strategic imperative for organizations
seeking to thrive in the rapidly evolving business environment. While digital transformation …

In this work, a comparison of the Electrostatically Doped Tunnel Field-Effect Transistor
(EDTFET) with Transition Metal Dichalcogenide (TMD) as channel material and Si MOSFET …

Recent advances in graphene nanoribbon (GNR) field-effect transistors (FETs), with finite
band-gap, have shown great promise for their use in ultra-scaled, low power and high speed …