Metrology for the next generation of semiconductor devices
NG Orji, M Badaroglu, BM Barnes, C Beitia… - Nature …, 2018 - nature.com
The semiconductor industry continues to produce ever smaller devices that are ever more
complex in shape and contain ever more types of materials. The ultimate sizes and …
complex in shape and contain ever more types of materials. The ultimate sizes and …
State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications
A Veloso, T Huynh-Bao, P Matagne, D Jang… - Solid-State …, 2020 - Elsevier
We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …
New structure transistors for advanced technology node CMOS ICs
Q Zhang, Y Zhang, Y Luo, H Yin - National Science Review, 2024 - academic.oup.com
Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
Vertical sandwich gate-all-around field-effect transistors with self-aligned high-k metal gates and small effective-gate-length variation
X Yin, Y Zhang, H Zhu, GL Wang, JJ Li… - IEEE Electron …, 2019 - ieeexplore.ieee.org
A new type of vertical nanowire (NW)/nanosheet (NS) field-effect transistors (FETs), termed
vertical sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work …
vertical sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work …
Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds
N Mallet, J Müller, J Pezard, F Cristiano… - … Applied Materials & …, 2023 - ACS Publications
GaAs nanowires are promising candidates for emerging devices in a broad field of
applications (eg, nanoelectronics, photodetection, or photoconversion). These …
applications (eg, nanoelectronics, photodetection, or photoconversion). These …
Design insights into thermal performance of vertically stacked JL-NSFET with high-k gate dielectric for sub 5-nm technology node
Design Insights into Thermal Performance of Vertically Stacked JL-NSFET with High-k Gate
Dielectric for Sub 5-nm Technology Node - IOPscience Skip to content IOP Science home …
Dielectric for Sub 5-nm Technology Node - IOPscience Skip to content IOP Science home …
Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process
Y Zhang, X Ai, X Yin, H Zhu, H Yang… - … on Electron Devices, 2021 - ieeexplore.ieee.org
We presented and demonstrated a new type of vertical nanowire (NW) and nanosheet (NS)
field-effect transistors (FETs), named vertical sandwich gate-all-around FETs or VSAFETs …
field-effect transistors (FETs), named vertical sandwich gate-all-around FETs or VSAFETs …
Vertical C-shaped-channel nanosheet FETs featured with precise control of both channel-thickness and gate-length
A novel vertical C-shaped-channel nanosheet field-effect-transistor (VCNFET) featured with
precise control of channel-thickness and gate-length, and a unique integration flow of Dual …
precise control of channel-thickness and gate-length, and a unique integration flow of Dual …
First demonstration of novel vertical gate-all-around field-effect-transistors featured by self-aligned and replaced high-κ metal gates
C Li, H Zhu, Y Zhang, Q Wang, X Yin, J Li, G Wang… - Nano …, 2021 - ACS Publications
A novel n-type nanowire/nanosheet (NW/NS) vertical sandwich gate-all-around field-effect-
transistor (nVSAFET) with self-aligned and replaced high-κ metal gates (HKMGs) is …
transistor (nVSAFET) with self-aligned and replaced high-κ metal gates (HKMGs) is …