GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

InGaN-based LEDs are efficient light sources in the blue–green light range and have been
successfully commercialized in the last decades. Extending their spectral range to the red …

Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …

Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately,
only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high …

We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-
phase epitaxy on a ScAlMgO 4 (0001)(SAM) substrate without a low-temperature buffer …

N-polar face-to-face annealed sputtered AlN (FFA Sp-AlN) was fabricated by sputtering with
an Al metal target and high-temperature annealing in a face-to-face configuration. The …

We numerically investigated the performance of N-polar AlGaN-based ultraviolet (UV) light-
emitting diodes (LEDs) with different Al contents in quantum wells (QWs) and barriers. We …

We performed a thermodynamic analysis of GaN metalorganic vapor phase epitaxy
considering the (0001) and (000− 1) surface states. Surface reconstruction, which depends …

The full width at half maximum (FWHM) of the luminescence of visible InGaN quantum well
(QW) based emitters increases with wavelength. This broadening of the luminescence …