Development of hafnium based high-k materials—A review
The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …
field effect transistor is considered one of the most dramatic advances in materials science …
High-k dielectrics for 4H-silicon carbide: present status and future perspectives
A Siddiqui, RY Khosa, M Usman - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Owing to its superior material and electrical properties such as wide bandgap and high
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power …
High‐mobility ZnO thin film transistors based on solution‐processed hafnium oxide gate dielectrics
M Esro, G Vourlias, C Somerton… - Advanced Functional …, 2015 - Wiley Online Library
The properties of metal oxides with high dielectric constant (k) are being extensively studied
for use as gate dielectric alternatives to silicon dioxide (SiO2). Despite their attractive …
for use as gate dielectric alternatives to silicon dioxide (SiO2). Despite their attractive …
Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide
In this paper, current conduction mechanisms of an atomic-layer-deposited HfO 2 gate
stacked on different thicknesses of thermally nitrided SiO 2 based on n-type 4H SiC have …
stacked on different thicknesses of thermally nitrided SiO 2 based on n-type 4H SiC have …
Interface control and leakage current conduction mechanism in HfO2 film prepared by pulsed laser deposition
The N 2 atmosphere postannealing is introduced to improve the interfacial quality and the
dielectric properties of HfO 2 films prepared by pulsed laser deposition. The disappearance …
dielectric properties of HfO 2 films prepared by pulsed laser deposition. The disappearance …
Nano-composite MOx materials for NVMs
C Bonafos, L Khomenkhova, F Gourbilleau… - Metal Oxides for Non …, 2022 - Elsevier
In this chapter, we will present a digest of the main materials science aspects of the
controlled fabrication of 2D arrays of semiconducting (Si, Ge) nanocrystals (NCs) in metal …
controlled fabrication of 2D arrays of semiconducting (Si, Ge) nanocrystals (NCs) in metal …
Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements
In-situ IV and CV characterization studies were carried out to determine the device quality of
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
Improved Electronic Performance of Stacking Gate Dielectric on 4H SiC
The MOS characteristics of an atomic layer-deposited HfO_2/N_2O-nitrided SiO_2 stacking
gate dielectric on n-type 4H SiC (0001) has been investigated. Three different thicknesses of …
gate dielectric on n-type 4H SiC (0001) has been investigated. Three different thicknesses of …
Formation of Zr-oxynitride thin films on 4H-SiC substrate
Formation of Zr-oxynitride by simultaneous oxidation and nitridation in nitrous oxide of
sputtered Zr on SiC substrate is reported. Sputtered Zr on SiC substrate and followed by …
sputtered Zr on SiC substrate is reported. Sputtered Zr on SiC substrate and followed by …
Oxide or carbide nanoparticles synthesized by laser ablation of a bulk Hf target in liquids and their structural, optical, and dielectric properties
NG Semaltianos, JM Friedt, R Chassagnon… - Journal of Applied …, 2016 - pubs.aip.org
Laser ablation of a bulk Hf target in deionized (DI) water, ethanol, or toluene was carried out
for the production of nanoparticles' colloidal solutions. Due to the interaction of the ablation …
for the production of nanoparticles' colloidal solutions. Due to the interaction of the ablation …