The nature of the low-frequency 1/f noise in electronic materials and devices is one of the
oldest unsolved physical problems (f is the frequency). The fundamental question of the …

This Letter investigates low frequency 1/f noise in an hBN encapsulated graphene device in
a dual gated geometry. The noise study is performed as a function of top gate carrier density …

We report the 1/f noise characteristics at low frequency in graphene field-effect transistors
that utilized a high-κ dielectric tantalum oxide encapsulated layer (a few nanometer thick) …

This contribution presents the results of investigations performed on monolayer graphene
field effect transistor-based (GFET-based) terahertz detectors. We have implemented three …

Here, we are at the tail end of 2022 and about to say farewell to the APL 60th anniversary
celebratory year. We bring a final three points of view from APL Editors, Professor Alex …

The second derivative image (SDI) method is widely applied to sharpen dispersive data
features in multi-dimensional spectroscopies such as angle resolved photoemission …

Few-atom clusters show great promise as catalysts for a number of industrially relevant
chemical reactions due to their high reactivity and size-dependent physical properties. To …

Graphene, a monolayer of carbon atoms, has gained prominence to augment existing chip-
scale photonic and optoelectronic applications, especially for sensing in optical radiation …