Due to the broad application prospects of optoelectronic devices and microwave devices at
high temperature and power, the process of Metal Organic Chemical Vapor Deposition …

The metalorganic vapor-phase epitaxy (MOVPE) growth of GaN from TMGa and NH3 at
higher process pressures up to near-atmospheric pressure in commercial production scale …

В книге рассмотрены теоретические и практические аспекты МОС-гидридной
эпитаксии (МОСГЭ)–одного из наиболее гибких и производительных современных …

The influence of AlGaN nucleation layers on zincblende GaN epilayers was studied to
investigate the formation of wurtzite phase inclusions in the epilayer. GaN epilayers grown …

The process of graphene growth by CVD involves a series of complex gas-phase surface
chemical reactions, which generally go through three processes, including gas phase …

Developing an understanding of the cavity stability underlying the metalorganic chemical
vapor deposition (MOCVD) of ZnO is critical to the fabrication of oxide-based devices …

A comprehensive analysis is made of III-nitride epitaxial growth to reveal possible effect of
operating conditions on the flow pattern and growth rate uniformity in vertical high-speed …

A combination of experimental and computational fluid dynamics-based reactor modeling
studies were utilized to study the effects of process conditions on GaN nanowire growth by …

基于计算流体力学在三维空间中模拟了水平行星式金属有机物化学气相沉积(MOCVD)
反应器生长GaN 材料的流场, 热场, 反应物与生成物的分布以及材料生长速率等重要物理参数 …

The gas-phase oligomerization reaction path in the growth of AlGaN by MOCVD has been
calculated using quantum chemical calculations with density functional theory. The …