Transfer printing is a materials assembly technique that uses elastomeric stamps for
heterogeneous integration of various classes of micro‐and nanostructured materials into two …

Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …

The realization of silicon-based light sources has been the subject of a major research and
development effort worldwide. Such sources may help make integrated photonic and …

The authors describe simultaneous interfacial misfit (IMF) array formation along with
antiphase domain (APD) suppression in highly mismatched (Δ a 0/a 0= 13%) AlSb grown on …

Integrated Lasers on Silicon provides a comprehensive overview of the state-of-the-art use
of lasers on silicon for photonic integration. The authors demonstrate the need for efficient …

We report here an optically pumped hybrid III-V/Si photoic crystal surface emitting laser
(PCSEL), consisting of a heterogeneously integrated III-V InGaAsP quantum well …

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer
layer were studied by high-angle annular dark-field scanning transmission electron …

We report the effect of synthesis parameters on the physical appearance and optical
properties of InP nanowires (NWs) grown on Si substrates by metal-organic chemical vapor …

A film of GaSb grown epitaxially on a Si substrate is a direct transition semiconductor useful
for application as a light source in Si photonics and channel material in next-generation field …

To open up new optical frequency resources for communications, a concept called all-band
photonics is proposed. This concept focuses on 1-μm waveband photonic transmission and …