The dimension down scaling capability of the silicon based transistors has produced
significant developments in the electronic industry. The channel length reduction has been …

The scalability of bulk CMOS faced various possible issues due to inherent material and
process innovation constraints. Alternatively, transistor devices with supplementary gates …

In this paper, a 3D process of a nanometric n-channel fin field-effect transistor (FinFET) is
discussed and the impact of variations of the fin parameter, the gate work function, and …

This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around
nanowire (GAA) MOSFET using different high permittivity (high-k) gate dielectric materials. In …

In nanoscale transistors, electron tunneling increases and causes a large leakage current
due to the reduced channel length and gate oxide thickness. To reduce the short-channel …

The remarkable development and continual proliferation of research in the nanotechnology
field have led to improvement in the efficiency of elementary devices. To improve their …

The miniaturization has become a key word for advanced integrated circuits over the last few
years. It is within this context that the fin field effect transistor (FinFET) has appeared as a …

This paper explores the performance characteristics of Germanium (Ge) and Gallium
Antimonide (GaSb) as potential channel materials for finFET devices. The analysis focuses …

As the technology is scaled down, short channel effects such as Vt variation, leakage
current, gate oxide tunneling become predominant due to the reduction in gate oxide …

Since its invention in the 1960s, one of the most significant evolutions of metal-oxide
semiconductor field effect transistors (MOSFETs) would be the 3D version that makes the …