The design and development of a monolithic system-on-chip silicon device for real time
measurement of radiation dose is described. The device is fabricated in a standard 180 nm …

One of the main obstacles delaying a more widespread use of radio frequency identification
(RFID) tags is cost. A critical element of any RFID system is a low power embedded non …

<? Pub Dtl=""?> The realization of a low-cost passive radio frequency identification (RFID)
tag requires the ability to fabricate the system in a bulk CMOS process without any additional …

The role of non-volatile memory (NVM) technologies in the business of silicon foundries is
reviewed. Solutions that comply with the NVM requests of diverse customers in today's …

Embodiments relate to a nonvolatile memory (“NVM) bitcell with reduced size and enhanced
capacitive coupling between the source and the floating gate. The bitcell may use band to …

This paper clarifies the reason for the specific array structure and operation methods of a
select gate lateral coupling (SGLC) cell array as well as its disturbance immunity. An SGLC …

Nowadays over 50% of the integrated circuits are manufactured at wafer foundries. This
book presents a foundry-integrated perspective of the field and is a comprehensive and up …

The nominal voltages are often higher than for the core CMOS, and the physical design of
the devices is different. The periphery devices' DRs are typically looser than for CMOS …

A recently presented single-poly non-volatile C-Flash memory bitcell provides an ultra-low
power low cost option for embedded RFID design. This cell requires the application of a 10V …

An asymmetric non-volatile memory bitcell is described. The bitcell comprises source and
drain regions comprising carriers of the same conductivity type. A floating gate rests on top …