Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
[HTML][HTML] Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films
The development of novel ultra-wide bandgap (UWBG) materials requires precise
understanding of the atomic level structural origins that give rise to their important properties …
understanding of the atomic level structural origins that give rise to their important properties …
Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field
Atom probe tomography allows for three-dimensional reconstruction of the elemental
distribution in materials at the nanoscale. However, the measurement of the chemical …
distribution in materials at the nanoscale. However, the measurement of the chemical …
Progress in modeling of III-nitride MOVPE
M Dauelsberg, R Talalaev - … in Crystal Growth and Characterization of …, 2020 - Elsevier
This review provides an introduction to III-Nitrides MOVPE process modeling and its
application to the design and optimization of MOVPE processes. Fundamentals of the …
application to the design and optimization of MOVPE processes. Fundamentals of the …
Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity
Interface engineering in heterostructures at the atomic scale has been a central research
focus of nanoscale and quantum material science. Despite its paramount importance, the …
focus of nanoscale and quantum material science. Despite its paramount importance, the …
Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0. 25Ga0. 75N
L Rigutti, L Mancini, D Hernández-Maldonado… - Journal of Applied …, 2016 - pubs.aip.org
The ternary semiconductor alloy Al 0.25 Ga 0.75 N has been analyzed by means of
correlated photoluminescence spectroscopy and atom probe tomography (APT). We find …
correlated photoluminescence spectroscopy and atom probe tomography (APT). We find …
GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
Abstract Metal-polar In 0.17 Al 0.83 N barriers, lattice-matched to GaN, were grown under N-
rich conditions by plasma-assisted molecular beam epitaxy. The compositional homogeneity …
rich conditions by plasma-assisted molecular beam epitaxy. The compositional homogeneity …
Atom probe tomography of nitride semiconductors
Atom probe tomography (APT) has emerged as a valuable tool in the study of nitride
semiconductors, despite the challenges involved in achieving controlled field evaporation. In …
semiconductors, despite the challenges involved in achieving controlled field evaporation. In …
Thermal budget increased alloy disorder scattering of 2DEG in III–N heterostructures
High-temperature processing steps are frequently used in manufacture of AlGaN/(AlN/) GaN
high electron mobility transistors (HEMTs). The thermal budgets drive Al diffusion into the …
high electron mobility transistors (HEMTs). The thermal budgets drive Al diffusion into the …
Electrical spin injection into the 2D electron gas in AlN/GaN heterostructures with ultrathin AlN tunnel barrier
X Zhang, N Tang, L Yang, C Fang… - Advanced Functional …, 2021 - Wiley Online Library
The spin injection into 2D electron gas (2DEG) in AlN/GaN heterostructures is studied by
magneto‐transport measurements. An ultrathin AlN layer at the hetero‐interface acts as a …
magneto‐transport measurements. An ultrathin AlN layer at the hetero‐interface acts as a …