Analytical modeling of sensitivity parameters influenced by practically feasible arrangement of bio-molecules in dielectric modulated FET biosensor
In this paper, analytical modeling of a Dielectric Modulated Double Gate Field Effect
Transistor (DM-DGFET) for biosensing application is presented with extensive data analysis …
Transistor (DM-DGFET) for biosensing application is presented with extensive data analysis …
Performance analysis of dual material graded channel cylindrical gate all around (DMGC CGAA) FET with source/drain underlap
PK Mudidhe, BR Nistala - 2022 IEEE International Symposium …, 2022 - ieeexplore.ieee.org
In this paper the effect of underlap on Dual material graded channel cylindrical gate all
around FET (DMGC CGAA FET) has been investigated. Due to improved gate electrostatic …
around FET (DMGC CGAA FET) has been investigated. Due to improved gate electrostatic …
Extraction of performance parameters of nanoscale SOI LDD-FinFET using a semi-analytical model of capacitance and channel potential for low-power applications
A Dixit, DP Samajdar - Applied Physics A, 2020 - Springer
In this paper, we have investigated the performance of a silicon-based low-doped drain
(LDD) SOI-FinFET for the first time and compared it with conventional FinFET for …
(LDD) SOI-FinFET for the first time and compared it with conventional FinFET for …
Compact analytical modeling of underlap gate stack graded channel junction accumulation mode junctionless FET in subthreshold regime
A Chattopadhyay, CK Sarkar, C Bose - Superlattices and Microstructures, 2022 - Elsevier
This paper presents the compact analytical model of underlap gate stack (GS) graded
channel (GC) junction accumulation mode (JAM) junctionless (JL) FET. At first, a …
channel (GC) junction accumulation mode (JAM) junctionless (JL) FET. At first, a …
Analytical modeling of linearity and intermodulation distortion of 3D gate all around junctionless (GAA-JL) FET
This paper presents analytical modeling of linearity and intermodulation distortion of a
rectangular GAA JL FET using 3D surface potential and drain current. The surface potential …
rectangular GAA JL FET using 3D surface potential and drain current. The surface potential …
Impact of varying channel length on Analog/RF performances in a novel n-type Silicon-based DG-JLT.
Shrinking MOSFETs suffer performance hits due to short-channel effects and leakage.
Junctionless transistors JLTs emerge as promising alternatives due to simpler fabrication …
Junctionless transistors JLTs emerge as promising alternatives due to simpler fabrication …
Influence of Varying Recessed Gate Height on Analog/RF Performances of a Novel Normally-Off Underlapped Double Gate AlGaN/GaN-based MOS-HEMT
C Chakraborty, A Kundu - IETE Journal of Research, 2024 - Taylor & Francis
Current transistor technology has issues with off-state current which reduces power
efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) …
efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) …
Evolution and performance analysis of quantum well FinFET for 3 nm technology node with type-II strained tri-layered hetero-channel system
Abstract 3D FinFETs are meticulously scaled down to sub-14 nm leading to reemerging
undesirable characteristics namely increased Drain Induced Barrier Leakage (DIBL), higher …
undesirable characteristics namely increased Drain Induced Barrier Leakage (DIBL), higher …
Limitation of CMOS Scaling and Effects of Parasitic Elements on the RF Performance
A Kundu - Handbook of Emerging Materials for Semiconductor …, 2024 - Springer
The invention of the transistor marked a pivotal moment in microelectronics, enabling the
development of smaller, more efficient electronic devices. Transistors, particularly MOSFETs …
development of smaller, more efficient electronic devices. Transistors, particularly MOSFETs …
Performance analysis of dual material junction accumulation mode tri gate junctionless SOI FET: Modeling and Simulation
M Goswami, A Chattopadhyay, C Bose - Silicon, 2022 - Springer
The paper illustrates the performance of Tri-Gate (TG) Dual Material (DM) SOI (Silicon on
Insulator) Junctionless (JL) FET operating in Junction Accumulation Mode (JAM). An …
Insulator) Junctionless (JL) FET operating in Junction Accumulation Mode (JAM). An …