InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75%

HM Chang, S Gandrothula, S Gee, T Tak… - Japanese Journal of …, 2024 - iopscience.iop.org
We have successfully demonstrated InGaN/GaN edge-emitting laser diodes (EELDs) on a
fully coalesced epitaxial lateral overgrown film from a c-plane GaN substrate. We achieve a …
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Method for dividing a bar of one or more devices

T Kamikawa, S Gandrothula - US Patent 12,087,577, 2024 - Google Patents
A method for dividing a bar of one or more devices. The bar is comprised of island-like III-
nitride-based semiconductor layers grown on a substrate using a growth restrict mask; the …
被引用次数：2 相关文章 所有 2 个版本

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR COMPONENT AND ELECTRONIC DEVICE

T Kamikawa, K Masaki, T Kobayashi, Y Hayashi - 2024 - Google Patents
C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL;
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被引用次数：1 相关文章 所有 3 个版本
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Method for removal of devices using a trench

T Kamikawa, S Gandrothula, M Araki - US Patent 12,051,765, 2024 - Google Patents
An epitaxial lateral overgrowth (ELO) layer is grown on an opening area of a substrate,
wherein the ELO layer is higher than a surface 5 of a trench in the substrate. The trench is …
相关文章 所有 2 个版本